Results 51 to 60 of about 42,237 (297)
On the crystallography of the Montana sapphires [PDF]
n ...
openaire +2 more sources
This work explores Li‐substituted P2 layered oxides for Na‐ion batteries by crystallographic and electrochemical studies. The effect of lithium on superstructure orderings, on phase transitions during synthesis and electrochemical cycling and on the interplay of O‐ versus TM‐redox is revealed via various advanced techniques, including semi‐simultaneous
Mingfeng Xu+5 more
wiley +1 more source
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai+8 more
wiley +1 more source
Polishing of optical media by dielectric barrier discharge inert gas plasma at atmospheric pressure [PDF]
In this paper, surface smoothing of optical glasses, glass ceramic and sapphire using a low-power dielectric barrier discharge inert gas plasma at atmospheric pressure is presented.
Gerhard C.+4 more
doaj +1 more source
The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee+5 more
wiley +1 more source
Single-crystal sapphire (α-Al2O3) is a hard and brittle material. Due to its highly crystalline nature, the fracture behavior of sapphire is strongly related to its crystal structure, and understanding the effects of crystal structure on the crack ...
Ningchang Wang+3 more
doaj +1 more source
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji+4 more
doaj +1 more source
The Radiation Temperature Characteristics of Sapphire under Shock Loading
A light gas gun was used to study the radiation temperature from the window material of sapphire. The luminescence characteristics were determined using a multi-wavelength pyrometer in the pressure range of 36–50 GPa.
Ningchao Zhang+5 more
doaj +1 more source
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
(a) Conductive atomic force microscopy (CAFM) image of the initial state bidomain structure of the Al0.85Sc0.15N (a) showing an enhanced conductivity of the head‐to‐head domain boundary. (b) CAFM image of the same area after application of several −65 V, 1 s voltage pulses showing lower conductivity of the generated tail‐to‐tail domain walls.
Haidong Lu+11 more
wiley +1 more source
A New Memory Effect in Bulk Crystals of 1T‐TaS2
A new memory effect is discovered in 1T‐TaS₂, appearing as a temperature shift in the metal to insulator transition, coinciding with the recently reported ramp reversal memory. These findings imply that ramp reversal memory is an emergent phenomenon, likely to appear in many different systems that share a few basic properties, which are discussed in ...
Avital Fried+4 more
wiley +1 more source