Results 221 to 230 of about 77,080 (261)

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

Advanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang, Daniele Zucchelli, Melissa Berteau‐Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu   +8 more
wiley   +1 more source

Bias-Dependent Scanning Tunneling Microscopy Signature of Bridging-Oxygen Vacancies on Rutile TiO2(110)

ACS Omega, 2018
Willie B. Maddox, Danda P. Acharya, G. Jeremy Leong, Peter Sutter, Cristian V. Ciobanu   +4 more
doaj   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

Advanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii   +5 more
wiley   +1 more source

Multinuclear metal-organic coordination structures containing metal-cluster nodes studied by scanning tunneling microscopy. [PDF]

Fundam Res
Wang Y, Li X, Yang Q, Shen Q, He Y, Zhang Y, Wang Y.   +6 more
europepmc   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

Scanning tunneling microscopy on cleaved Mn₃Sn(0001) surface. [PDF]

Sci Rep, 2019
Yang HH, Lee CC, Yoshida Y, Ikhlas M, Tomita T, Nugroho A, Ozaki T, Nakatsuji S, Hasegawa Y.   +8 more
europepmc   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source