Results 61 to 70 of about 20,734 (282)

Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy [PDF]

open access: yes, 1997
We have employed ballistic electron emission microscopy (BEEM) to study the energy positions in the conduction band of AlxGa1 – xAs. Epilayers of undoped AlxGa1 – xAs were grown by molecular beam epitaxy on conductive GaAs substrates.
Cheng, X.-C.   +2 more
core   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Imaging quasiperiodic electronic states in a synthetic Penrose tiling

open access: yesNature Communications, 2017
Quasicrystals possess long-range order but lack translational symmetry. Here, the authors use atomic manipulation and scanning tunnelling microscopy to assemble a Penrose tiling quasicrystal and observe that its electronic density of states has a ...
Laura C. Collins   +4 more
doaj   +1 more source

Predicting the influence of a p2-symmetric substrate on molecular self-organization with an interaction-site model [PDF]

open access: yes, 2011
An interaction-site model can a priori predict molecular selforganisation on a new substrate in Monte Carlo simulations. This is experimentally confirmed with scanning tunnelling microscopy on Fre´chet dendrons of a pentacontane template.
Barth   +29 more
core   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

Controlling the screening process of a nanoscaled space charge region by minority carriers

open access: yesNature Communications, 2016
Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth   +2 more
doaj   +1 more source

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

open access: yes, 2011
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection ...
Baltazar, Samuel   +8 more
core   +4 more sources

Ultrastable Photoactive Halide Perovskite Nanocrystal‐Sensitized SnO2 Nanorods for Room‐Temperature NO2 Detection

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk   +10 more
wiley   +1 more source

EFFECTS OF THE STM TIP ON ADSORBATE IMAGE [PDF]

open access: yes, 1991
Scanning tunnelling microscopy provides atomic scale information about surface topography and electronic structure. However, the way the tip affects the STM image cannot always be neglected. We present a theoretical study of the effect of the non-uniform
RAMOS, MMD, STONEHAM, AM, SUTTON, AP
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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