Results 81 to 90 of about 20,734 (282)

A low-temperature dynamic mode scanning force microscope operating in high magnetic fields

open access: yes, 1999
A scanning force microscope was implemented operating at temperatures below 4.2K and in magnetic fields up to 8T. Piezoelectric quartz tuning forks were employed for non optical tip-sample distance control in the dynamic operation mode. Fast response was
Ensslin, K.   +4 more
core   +1 more source

In‐Situ Solution Complexation for n‐Type Surface‐Energetics Reconstruction in 2.0 eV Ultra‐Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
A reactive in situ solution complexation strategy reconstructs the surface of 2.0 eV ultra‐wide‐bandgap perovskites via proton transfer. This chemical modulation eliminates metallic defects and induces a degenerate‐like n‐type surface, establishing an Ohmic tunneling contact.
Saemon Yoon   +11 more
wiley   +1 more source

Scanning Tunneling Microscopy

open access: yesSen'i Gakkaishi, 1988
Publisher Summary Scanning tunneling microscopy (STM) has been finding ever increasing application in surface physics. STM, even as it is used now, has furnished fascinating results, and undoubtedly, holds the greatest promise for surface physics. This is because of its unique resolution that can approach hundreds of angstroms along the normal to the
openaire   +3 more sources

Vibrational assignments and line shapes in inelastic tunnelling spectroscopy: H on Cu(100)

open access: yes, 2006
We have carried out a computational study of the inelastic electron tunneling spectrum (IETS) of the two vibrational modes of a single hydrogen atom on a Cu(100) surface in a scanning tunneling microscopy (STM) junction.
Mats Persson, Sami Paavilainen, T. Mii
core   +1 more source

Exact location of dopants below the Si(001):H surface from scanning tunnelling microscopy and density functional theory [PDF]

open access: yes, 2017
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants.
Bowler, David R.   +7 more
core   +2 more sources

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices

open access: yesMedžiagotyra, 2014
Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon.
Marius TREIDERIS   +5 more
doaj   +1 more source

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

open access: yesAdvanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon   +4 more
wiley   +1 more source

Optimal geometry for a quartz multipurpose SPM sensor

open access: yesBeilstein Journal of Nanotechnology, 2013
We propose a geometry for a piezoelectric SPM sensor that can be used for combined AFM/LFM/STM. The sensor utilises symmetry to provide a lateral mode without the need to excite torsional modes.
Julian Stirling
doaj   +1 more source

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire [PDF]

open access: yes, 2011
Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers.
Bayle-Guillemaud, Pascale   +6 more
core   +4 more sources

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