Results 261 to 270 of about 531,532 (341)

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge

open access: yesAdvanced Functional Materials, EarlyView.
Fe3Ge, a Kagome‐lattice magnet, exhibits remarkable anomalous Hall and Nernst effects, with transverse thermoelectric conductivity surpassing or comaprable to some well‐known ferromagnets. First‐principles calculations attribute these to Berry curvature from massive Dirac gaps. Additionally, topological Hall and Nernst signals emerge from field‐induced
Chunqiang Xu   +11 more
wiley   +1 more source

Clean‐Limit 2D Superconductivity in a Thick Exfoliated Kagome Film

open access: yesAdvanced Functional Materials, EarlyView.
This study reports clean‐limit 2D superconductivity in a thick kagome system, analogous to the 3D case. It observes a drop in superfluid stiffness near the superconducting transition and a cusp‐like feature in the angular dependence of the upper critical field.
Fei Sun   +3 more
wiley   +1 more source

Transparent Inorganic–Organic Bilayer Neural Electrode Array and Integration to Miniscope System for In Vivo Calcium Imaging and Electrophysiology

open access: yesAdvanced Functional Materials, EarlyView.
This study presents the BioCLEAR system, a highly transparent and conductive neural electrode array composed of silver nanowires (AgNWs) and doped PEDOT:PSS, enabling neural recordings with minimal optical artifacts. When integrated with a GRIN lens, this cost‐effective neural implant allows simultaneous electrophysiological recording and GCaMP6‐based ...
Dongjun Han   +17 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Selective and Precise Editing of Digital Polymers Through Parallel or Series Toehold‐Mediated Strand Displacement

open access: yesAdvanced Functional Materials, EarlyView.
A sequence‐encoded supramolecular construct containing two accessible toeholds is developed herein for enabling multiple editing operations. By introducing specific input strands, it is possible to selectively erase or rewrite digital content through parallel or series toehold‐mediated strand displacement (PTMSD or STMSD).
Jakub Ossowski   +3 more
wiley   +1 more source

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