Results 201 to 210 of about 10,995,154 (282)

Structural Basis of Lymphangiogenic Receptor VEGFR‐3 Activation Mediated by Distinctive Clustering of the Ligand–Receptor Complex

open access: yesAdvanced Science, EarlyView.
VEGF‐C and its receptor VEGFR‐3 are critical for lymphangiogenesis. Cryo‐EM structures of the VEGFR‐3/VEGF‐C ectodomain complex reveal a canonical 2:2 ligand–receptor hetero‐tetramer that further assembles into higher‐order clusters beyond simple receptor dimerization.
Ryeongeun Cho   +6 more
wiley   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

open access: yesAdvanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler   +4 more
wiley   +1 more source

Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided generative surrogate framework is developed for programmable metasurface beamforming. Mode‐conditioned binary state generation, aperture‐physics prediction, routed residual correction, NSGA‐II optimization, and CST validation are combined to support fast candidate screening and full‐wave beam refinement across single‐beam, dual‐beam ...
Wenqian Liu   +4 more
wiley   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

open access: yesAdvanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg   +7 more
wiley   +1 more source

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya ...
Bob Vermeulen   +14 more
wiley   +1 more source

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