Results 81 to 90 of about 15,297,882 (275)

Ab Initio Thermoelectric Transport Calculations of Alloyed Half‐Heuslers

Advanced Science, EarlyView.
The effect of alloying on the electronic transport of half‐Heusler thermoelectric materials is explored using a fully ab initio approach. A novel method is developed that combines calculations of alloyed supercells with Boltzmann transport, considering the full energy and momentum dependent scattering processes from first principles extracted ...
Ankit Kumar, Bhawna Sahni, Neophytos Neophytou   +2 more
wiley   +1 more source

Optimal global second-order regularity and improved integrability for parabolic equations with variable growth

Advances in Nonlinear Analysis
We consider the homogeneous Dirichlet problem for the parabolic equation ut−div(∣∇u∣p(x,t)−2∇u)=f(x,t)+F(x,t,u,∇u){u}_{t}-{\rm{div}}({| \nabla u| }^{p\left(x,t)-2}\nabla u)=f\left(x,t)+F\left(x,t,u,\nabla u) in the cylinder QT≔Ω×(0,T){Q}_{T}:= \Omega ...
Arora Rakesh, Shmarev Sergey
doaj   +1 more source

Hölder Regularity of Solutions to Second-Order Elliptic Equations in Nonsmooth Domains

Boundary Value Problems, 2006
We establish the global Hölder estimates for solutions to second-order elliptic equations, which vanish on the boundary, while the right-hand side is allowed to be unbounded.
Sungwon Cho, Mikhail Safonov
doaj   +1 more source

Designer Moiré Quantum Materials Enabled by Freestanding Oxide Membranes in Twisted and Hybrid Bilayers

Advanced Science, EarlyView.
Freestanding oxide membranes transform twistronics by enabling deterministic stacking, strain release, and integration with two‐dimensional materials. A unified framework links local atomic registry to structural reconstruction, polar textures, charge modulation, flat bands, and magnetic responses, while identifying the fabrication and characterization
Puneet Kaur, Rahul, Jan‐Chi Yang
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Harnack type inequality for non-negative solutions of second-order degenerate parabolic equations in divergent form

Electronic Journal of Differential Equations, 2016
We study a class of second-order degenerate parabolic equations in divergent form. We prove two analogues of the Harnack inequality, one for non-negative weak solutions, an another for non-negative solutions.
Sarvan T. Huseynov
doaj  

3D MXene Aerogel Frameworks With In Situ‐Grown BiFeO3 for Synergistically Enhanced Thermoelectric Performance

Advanced Electronic Materials, EarlyView.
A lightweight, 3D MXene aerogel framework integrated with bismuth ferrite was developed to efficiently harvest waste heat. By growing the oxide directly onto the porous aerogel, the composite achieves strong interfacial connections. This unique architecture simultaneously boosts electrical power generation and blocks heat flow, resulting in an ...
Oju Kwon, Jinhyun Park, Minsu Kim, Dabin Park, Jooheon Kim   +4 more
wiley   +1 more source

Heavy‐Atom Tunneling at Room Temperature Revealed by Instanton Theory

Angewandte Chemie, EarlyView.
Usually, tunneling does not play a significant role in chemical reactions except at low temperature, especially when heavy atoms are involved. However, using nonadiabatic instanton theory we find that heavy‐atom tunneling dominates the reaction mechanism for spin‐forbidden processes in the synthesis of strained organic molecules even at room ...
Debaarjun Mukherjee, Kamil D. Petryczkiewicz, Jeremy O. Richardson   +2 more
wiley   +2 more sources

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Advanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza   +9 more
wiley   +1 more source

Coexistence of Large Nernst Effect and Axis‐Dependent Conduction Polarity in Semimetal MoSi2

Advanced Electronic Materials, EarlyView.
MoSi2${\rm MoSi}_2$ is a rare material in which axis‐dependent conduction polarity (ADCP) and a large ordinary Nernst effect (ONE) coexist. The pronounced ONE (199μVK−1$199\,\umu \mathrm {V}\,\mathrm {K}^{-1}$) originates from nearly perfect carrier compensation, high mobility, and likely phonon drag, while ADCP arises from mixed‐dimensionality of the ...
Orest Pavlosiuk, Maciej J. Winiarski
wiley   +1 more source