Results 91 to 100 of about 989,853 (279)

Test of Bell's Inequality using the Spin Filter Effect in Ferromagnetic Semiconductor Micro-structures

, 2000
A theoretical proposal for testing Bell's inequality in mesoscopic systems is presented. We show that the entanglement of two electron spins can be detected in the spin filter effect in the mesoscopic semiconductor / ferromagnetic semiconductor ...
Aspect A., Aspect A., Bell J. S., Bennet C. H., Burkard G., Burkard G., Burkard G., Büttiker M., Büttiker M., Choi M-S., Clauser J. F., Clauser J. F., Ekert A., Greenberger D., Hao X., Henny M., Hu X., Ionicioiu R., Kikkawa J. M., Kwiat P. G., Liu R., Loss D., Loss D., Meservey R., Moodera J. S., Moodera J. S., Oliber W., Prinz G. A., Recher P., Schliemann J., Scully M. O., Steane A.   +31 more
core   +1 more source

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001)

, 1997
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural ...
A. Ruini, C. Berthod, H.J. Monkhorst, J. Bardi, J. Tersoff, K. Kunc, M. Methfessel, M. Peressi, M. van Schilfgaarde, M. van Schilfgaarde, R. Pick, R. Resta, R. Resta, R.G. Dandrea, R.J. Needs, S. Baroni, S. de Gironcoli, W. Mönch, X. Gonze   +18 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As

, 2001
We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian, are taken into
A. H. MacDonald, A. Haury, A. Oiwa, A. Van Esch, A. Van Esch, B. Beschoten, B. H. Lee, E. Pashitski, F. Matsukura, G. A. Prinz, G. A. Prinz, H. Ohno, H. Ohno, H. Ohno, H. Ohno, H. Ohno, J. König, J. König, J. M. Luttinger, J. Okabayashi, J. Schliemann, J. Schliemann, Jürgen König, M. Abolfath, P. Lyu, S. Sanvito, T. Dietl, T. Dietl, T. Dietl, T. Hayashi, T. Jungwirth, T. Jungwirth, T. M. Pekarek, T. Omiya, T. Story   +34 more
core   +1 more source

Controlled Aggregation of Pyrene‐Based Supramolecular Nanostructures for Light‐Driven Switchable H2 or H2O2 Production

Advanced Functional Materials, EarlyView.
This work reports the self‐assembly of a pyrene derivative into two distinct nanostructures and their application in visible‐light photocatalysis. The two nanostructures exhibit completely different yet complementary photocatalytic activities, promoting either H2 or H2O2 evolution.
Marianna Barbieri, Matilde Doardo, Ilaria Fortunati, Anna Fortunato, Elisabetta Collini, Francesca Arcudi, Luka Ðorđević   +6 more
wiley   +1 more source

The Effect of Fin Structure in 5 nm FinFET Technology

Journal of Microelectronic Manufacturing, 2019
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang, Yu Ding, Wenqiao Chen, Shaojian Hu, Shoumian Chen   +4 more
doaj   +1 more source

Continuous Wave Observation of Massive Polariton Redistribution by Stimulated Scattering in Semiconductor Microcavities [PDF]

, 2000
R. M. Stevenson, Vasily N. Astratov, M. S. Skolnick, D. M. Whittaker, M. Emam-Ismail, A. I. Tartakovskii, P. G. Savvidis, Jeremy J. Baumberg, J.S. Roberts   +8 more
openalex   +1 more source

Electron, hole, and exciton spectra in a quantum wire crossing the quantum well [PDF]

, 2007
The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor quantum wire crossing the plane ...
Gryschyк, А. М., Maкhanets, О. М.
core  

Kinetic Insights into Precursor‐Assisted Soft Sphere Close Packing Revealed by In Situ GISAXS with Implications for Gas Sensing

Advanced Functional Materials, EarlyView.
The versatile precursor‐assisted soft sphere close packing during slot‐die coating is investigated with in situ X‐ray scattering. The soft crystallization pathways towards a close packing involve multistep structural transitions such as surface nucleation, in‐plane, and out‐of‐plane crystallization.
Guangjiu Pan, Wenhe Xie, Suzhe Liang, Ting Tian, Shanshan Yin, Lixing Li, Altantulga Buyan‐Arivjikh, Jinsheng Zhang, Thomas Baier, Zhuijun Xu, Matthias Schwartzkopf, Sarathlal Koyiloth Vayalil, Stephan V. Roth, Yonghui Deng, Peter Müller‐Buschbaum   +14 more
wiley   +1 more source