Results 241 to 250 of about 788,298 (276)
Recent Progress in Gain Materials for Microlasers and Modern Digital Approaches for Biophotonics: From Dyes to Semiconductors. [PDF]
Micromachines (Basel)Calles-Arriaga CA +8 more
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Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub>. [PDF]
Sci AdvShen J +14 more
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Revealing and engineering contact-origin noise in ultrathin tellurium transistors. [PDF]
Nanoscale AdvLee HW +7 more
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Probing Semiconductor-Semiconductor Interfaces
Physics Today, 1987Almost every aspect of modern life is affected by a practical result of research in condensed matter physics: semiconductor devices. The performance of these solid-state devices is determined largely by the physical properties of the interfaces within them.
Robert S. Bauer, Giorgio Margaritondo
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2009
The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors.
Cattarin S., DECKER, Franco
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The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors.
Cattarin S., DECKER, Franco
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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Bidirectional Semiconductor Laser
Science, 1999A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers)
Gmachl C +5 more
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Physical Review B, 1981
A detailed study of the electronic structure of a number of (111) vacuum-semiconductor, metal-semiconductor, and semiconductor-semiconductor interfaces has been made by using a cluster-Bethe-lattice method. Numerical calculations for the electronic density of states of Ge, GaAs, and ZnSe surfaces and interfaces have been performed using a realistic ...
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A detailed study of the electronic structure of a number of (111) vacuum-semiconductor, metal-semiconductor, and semiconductor-semiconductor interfaces has been made by using a cluster-Bethe-lattice method. Numerical calculations for the electronic density of states of Ge, GaAs, and ZnSe surfaces and interfaces have been performed using a realistic ...
openaire +1 more source