An Investigation of the Electrical Performance of Polymer-Based Stretchable TFTs Under Mechanical Strain Using the Y-Function Method. [PDF]
Lee H +10 more
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Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova +10 more
wiley +1 more source
Dirac metallic FeB<sub>2</sub>-induced low Schottky barrier and electrically tunable Schottky contact in FeB<sub>2</sub>/MoS<sub>2</sub> van der Waals heterostructure. [PDF]
Nhan TT, Cuong NQ, Nguyen CV, Phuc HV.
europepmc +1 more source
A synthetic method for preparing double channelling materials, and an operational mechanism for selective p- and n-type channels for gas sensing. [PDF]
Choi MS +8 more
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High-Uniformity Core-Shell Nanofibers for Semiconductor Packaging: Process Optimization and Performance Study of Airflow-Assisted Coaxial Electrospinning. [PDF]
Chen X +5 more
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Multiple causal pathways of high-quality development for semiconductor enterprises in China. [PDF]
Li S, Yang X.
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Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor. [PDF]
Lee ST +6 more
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Newly Emerging Nanotechnologies of Innovative Devices for Radioisotope Batteries. [PDF]
Huang Q +10 more
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Spintronics with Semiconductors
2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04), 2004While today's semiconductor electronics is based on the manipulation of electron charge, "spintronics" uses spin for extended functionality. Semiconductor spintronics is still in its infancy, in contrast to metallic magnetoelectronics, which e.g. is present in all modern reader heads of computer hard disks.
Daniel Hägele +3 more
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Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
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