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Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

Newly Emerging Nanotechnologies of Innovative Devices for Radioisotope Batteries. [PDF]

open access: yesNanomaterials (Basel)
Huang Q   +10 more
europepmc   +1 more source
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Spintronics with Semiconductors

2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04), 2004
While today's semiconductor electronics is based on the manipulation of electron charge, "spintronics" uses spin for extended functionality. Semiconductor spintronics is still in its infancy, in contrast to metallic magnetoelectronics, which e.g. is present in all modern reader heads of computer hard disks.
Daniel Hägele   +3 more
openaire   +1 more source

Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

Applied Surface Science, 1990
Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
H. Hasegawa   +5 more
openaire   +1 more source

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