Results 31 to 40 of about 341,789 (294)

Controlling lithium cobalt oxide phase transition using molten fluoride salt for improved lithium-ion batteries

open access: yesCommunications Materials
LiCoO2 is a historic lithium-ion battery cathode that continues to be used today because of its high energy density. However, the practical capacity of LiCoO2 is limited owing to the harmful phase transition at high voltages, which prevents the ...
Mayumi Mikami   +11 more
doaj   +1 more source

Influence of Fluorine Doping on Rutile TiO2 Nanostructures for Visible-Light-Driven Photocatalysis: A DFT + U Study

open access: yesNanomaterials
In this work, a density functional theory (DFT) with Hubbard correction (U) approaches implemented through the Quantum ESPRESSO code is utilized to investigate the effects of fluorine (F) doping on the structural, electronic, and optical properties of ...
Fikadu Takele Geldasa   +1 more
doaj   +1 more source

COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES

open access: yesLe Journal de Physique Colloques, 1990
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
openaire   +1 more source

Resistance Rapid Heating of Aluminum Coatings in an Extreme High Vacuum–Adequate Atmosphere for Hot Stamping

open access: yesAdvanced Engineering Materials, EarlyView.
The subject of this work is the development of a corrosion‐protective coating on steel sheets for form hardening. Rapid heating in an extreme high vacuum (XHV)‐adequate atmosphere is a useful method to prevent oxidation during alloying of 22MnB5 and aluminum to obtain a metallurgical bonding.
Lorenz Albracht   +5 more
wiley   +1 more source

Uncertainty Assessment Framework for IGBT Lifetime Models. A Case Study of Solder-Free Modules

open access: yesInternational Journal of Prognostics and Health Management
Insulated gate bipolar transistors (IGBTs) are ubiquitous semiconductor devices used in diverse electronic power applications. The reliability and lifetime assessment of IGBTs is intricate and influenced by different ageing processes.
Ander Zubizarreta   +5 more
doaj   +1 more source

Fabrication of Er3+/Yb3+ Co-Doped Bi5O7I Microsphere With Upconversion Luminescence and Enhanced Photocatalytic Activity for Bisphenol A Degradation

open access: yesFrontiers in Chemistry, 2020
Er3+/Yb3+ co-doped Bi5O7I uniform porous microsphere photocatalysts were synthesized by a two-step chemical method, which possesses excellent photocatalytic performance and upconversion luminescence property.
Baowei Cao   +8 more
doaj   +1 more source

Pressure Sensing of Symmetric Defect Photonic Crystals Composed of Superconductor and Semiconductor in Low-Temperature Environment

open access: yesCrystals, 2023
We theoretically investigate the defect mode transmittance of light waves in superconductor–semiconductor photonic crystals and its pressure-sensing dependence.
Haiyang Hu   +5 more
doaj   +1 more source

Bias‐Free Highly Efficient and Stable Dye‐Sensitized Photoelectrochemical Cells via Cascade Charge Transfer

open access: yesAdvanced Functional Materials, EarlyView.
A buried‐junction DSPEC design is introduced that leverages cascade charge transfer to enhance efficiency, stability, and versatility. This approach facilitates effective charge transfer and minimizes recombination losses, leading to significant improvements.
Jun‐Hyeok Park   +8 more
wiley   +1 more source

High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits

open access: yesCommunications Materials
Formation of a single crystalline oxide semiconductor on an insulating film as a channel material capable of three-dimensional (3D) stacking would enable 3D very-large-scale integration circuits.
Shunpei Yamazaki   +12 more
doaj   +1 more source

Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors

open access: yesCrystals
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film.
Irving K. Cashwell   +3 more
doaj   +1 more source

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