Results 41 to 50 of about 567,144 (305)

State of the art in semiconductor detectors [PDF]

, 1989
The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors ...
Gatti, E., Rehak, P.
core  

Stable room-temperature thallium bromide semiconductor radiation detectors

APL Materials, 2017
Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field.
A. Datta, J. Fiala, P. Becla, Shariar Motakef   +3 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Progress in semiconductor drift detectors [PDF]

, 1985
Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously.
Kemmer, J., Klanner, R., Gatti, E., Holl, P., Dietl, H., Walton, J., Rehak, P., Lutz, G., Longoni, A., Sanpietro, M.   +9 more
core  

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Sensors, 2010
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position.
Chongqi Yu, Hui Wang
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Numerical simulation of neutron radiation effects in avalanche photodiodes [PDF]

, 2000
A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a ...
Osborne, M, Watts, SJ, Hobson, PR
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Semiconductor radiation detectors: device physics [PDF]

, 1999
Describes the field of modern semiconductor detectors used for energy and position measurement radiation. This book includes an introduction to semiconductor physics.
Lutz, Gerhard
core  

Measurement of K fluorescence analysis in ancient bone using X-ray transition edge sensor and semiconductor detectors

European Physical Journal C: Particles and Fields
Transition edge sensor (TES) have high energy resolution, which can extremely improve in various scientific experiments the energy spectrum analysis capability and have a wide range of applications in almost all fields covering the whole wave band of ...
Zhi-Wei Li, Si-Ming Guo, Shuo Zhang, Jin-Jie Wu, Zhen Wang, Nan Li, Zhong-Tao Wang   +6 more
doaj   +1 more source