Results 61 to 70 of about 1,471,378 (298)

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, Volume 36, Issue 43, 29 May 2026.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, Volume 36, Issue 43, 29 May 2026.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

, 2013
New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics ...
L. Abbene, G. Gerardi, G. Raso, S. Basile, M. Brai, F. Principato   +5 more
semanticscholar   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Semiconductor X-ray detectors

, 2014
Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and ...
Lowe, Barrie Glyn, Sareen, Robert Anthony   +1 more
core  

Semiconductor detectors and focal plane arrays for far-infrared imaging

, 2013
The detection of far-infrared (far-IR) and sub-mm-wave radiation is resistant to the commonly employed techniques in the neighbouring microwave and IR frequency bands.
Antoni Rogalski
semanticscholar   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Research on the Technological Progress of CZT Array Detectors

Italian National Conference on Sensors
CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature ...
Zhangwen Li, Jinxing Cheng, Fang Liu, Qingbo Wang, W. Wen, Guang-yin Huang, Zeqian Wu   +6 more
semanticscholar   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

Advanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin, Arthur L. Shilov, Subhajit Jana, Ilya Mazurenko, Pierre A. Pantaleon, Mikhail Kashchenko, Nikita Krivovichev, Viacheslav Dremov, Igor Gayduchenko, Takashi Taniguchi, Kenji Watanabe, Yibo Wang, Kostya S. Novoselov, Dmitry A. Svintsov, Grigory Goltsman, Elena I. Titova, Denis A. Bandurin   +16 more
wiley   +1 more source