Results 71 to 80 of about 1,471,378 (298)

New materials for radiation hard semiconductor detectors

, 2005
We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments.
Sellin, P J, Vaitkus, J, Sellin, PJ
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

The Role of Ultra‐Thin Buffer Layers for Achieving Ultra‐Low Dark Currents in Single‐Component Organic Photodetectors

Advanced Functional Materials, EarlyView.
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber, Ying Sun, Jakob Wolansky, Louis Conrad Winkler, Anna‐Lena Hofmann, Fred Kretschmer, Hrisheekesh Thachoth Chandran, Tianyi Zhang, Mike Hambsch, Stefan C. B. Mannsfeld, Karl Leo, Ji‐Seon Kim, Johannes Benduhn   +12 more
wiley   +1 more source

Learning-based physical models of room-temperature semiconductor detectors with reduced data. [PDF]

Sci Rep, 2023
Banerjee S, Rodrigues M, Ballester M, Vija AH, Katsaggelos AK.   +4 more
europepmc   +1 more source

Near-Field Analysis of Terahertz Pulse Generation From Photo-Excited Charge Density Gradients [PDF]

, 2015
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses gives rise to emission of electromagnetic pulses of terahertz (THz) frequency radiation.
Natrella, M, Freeman, JR, Renaud, CC, Graham, CS, Linfield, EH, Moodie, DG, Cannard, PJ, Davies, AG, Mitrofanov, O, Seeds, AJ, Mueckstein, R, Hatem, O, Robertson, MJ   +12 more
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

The Simulated Characterization and Suitability of Semiconductor Detectors for Strontium 90 Assay in Groundwater. [PDF]

Sensors (Basel), 2021
Turkington G, Gamage KAA, Graham J.
europepmc   +1 more source

11th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors

, 2013
The conference will focus on semiconductor detectors issues relevant to applications in accelerator and space research. Topics include: - large semiconductor systems for calorimetry and tracking applications; - radiation damage measurements and modeling;

core  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Semiconductor detectors for high-luminosity environments

, 2007
As the final touches are being put to the LHC detectors, the race is on to perfect technologies which could be used to confront the challenges of the ultra-high luminosities of the SLHC and International Linear Collider (ILC).
Collins, Paula, Paula Collins, Collins, P   +2 more
core   +1 more source