Results 181 to 190 of about 322,683 (317)

Two‐Dimensional Materials as a Multiproperty Sensing Platform

Advanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana, Shubhrasish Mukherjee, Dmitrii Litvinov, Magdalena Grzeszczyk, Sergey Grebenchuk, Makars Šiškins, Virgil Gavriliuc, Yihang Ouyang, Changyi Chen, Yuxuan Ye, Meng Yiming, Maciej Koperski   +11 more
wiley   +1 more source

CMOS-Compatible Micro Photovoltaic Generator with Post-Processing Enhanced Optical Absorption. [PDF]

Micromachines (Basel)
Chen HW, Lee CY, Dai CL.
europepmc   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

Influence of metal-semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs). [PDF]

Sci Rep
Kang SC, Cho JC, Lee ES, Park DW.
europepmc   +1 more source

Devices for express diagnostics of power semiconductor devices and semiconductor converters

, 2023
Elise B. Koroleva, S. M. Kurmashev, Konstantin K. Kim, A. A. Tkachuk, A. A. Kuznetsov   +4 more
openalex   +2 more sources

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Flexible n-Channel Organic Transistors with Low Contact Resistance. [PDF]

ACS Appl Mater Interfaces
Steffens S, Wollandt T, Cordero-Solano K, Eichelmann R, Kochan A, Sun X, Letzkus F, Burghartz JN, Ludwigs S, Gade LH, Klauk H.   +10 more
europepmc   +1 more source

Semiconductor device applications of laser processing

, 1981
D. Lloyd Crosthwait
openalex   +2 more sources

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

Advanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere, Yong Beom Kim, Colin Gilgenbach, James M. LeBeau, WooChul Jung, Harry L. Tuller   +5 more
wiley   +1 more source

MXene alloy-based metal-semiconductor contact for low-resistive field-effect transistors. [PDF]

Commun Eng
Bera S, Kaushik D, Kumar H.
europepmc   +1 more source