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Semiconductor device simulation

IEEE Transactions on Electron Devices, 1983
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables.
Fichtner, Wolfgang   +2 more
openaire   +1 more source

Semiconductor Device Simulation

IEEE Transactions on Microwave Theory and Techniques, 1974
Two of the numerical methods most widely used in solving the set of partial differential transport equations for holes, electrons, and electric field in semiconductor devices and the various numerical instability phenomena which can be encountered are described in detail.
C.M. Lee, R.J. Lomax, G.I. Haddad
openaire   +1 more source

Semiconductor devices

2023
Semiconductor materials are beneficial in their performance and can be easily deployed by the addition of impurities known as doping. The resistivity of the semiconductor can be changed by incorporating the electric or magnetic field, light or heat, or mechanical distortion. Therefore, semiconductors can make excellent devices.
Sunipa Roy   +3 more
  +4 more sources

Optoelectronic semiconductor devices

1998
An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum.
Leong, Daniel   +3 more
openaire   +5 more sources

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