Results 131 to 140 of about 3,944,515 (307)

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

, 2002
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core   +1 more source

Desert Plant Inspired Hierarchical Nanofibrous Membranes for Integrated Solar Desalination and Heavy Metal Remediation

Advanced Functional Materials, EarlyView.
An Alhagi maurorum inspired hierarchical composite membrane (NFCu) was developed by integrating heavy metal remediation and solar‐driven interfacial evaporation in a single platform. Beyond the photothermal effect, a localized photocatalytic process is realized on the CuO surface, deepening the mechanistic understanding of light–matter–water ...
Yuqiong He, Ronggang Luo, Shengbo Ge, Kaixin Jiang, Kirsten Dyer, Xiaojian Zhou, Ben Bin Xu, Xuehua Zhang, Guanben Du, Kaimeng Xu   +9 more
wiley   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Modelling and simulation of advanced semiconductor devices [PDF]

, 2017
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here. Our discussions are based on numerous theoretical approaches starting from first principle methods and continuing with discussions based on more well ...
Adamu-Lema, Fikru, Duan, Meng, Berrada, Salim, Lee, Jaehyun, Al-Ameri, T., Georgiev, Vihar, Asenov, Asen   +6 more
openaire  

Structure‐Guided Balancing of Ambipolar Transport Enables Symmetric Switching in Heterojunction Bilayer Organic Transistor Inverters

Advanced Functional Materials, EarlyView.
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi, Young Yong Kim, Ji Ho Youk, Hoichang Yang   +3 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Device to Circuit Co‐Design Utilizing High‐Performance PEALD Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems

Advanced Science
The development of oxide semiconductor devices for monolithic 3D (M3D) integration has largely remained at the device level, limiting progress toward large‐scale applications.
Wenhui Wang, Tao Zhang, Zelin Yuan, Haoran Peng, Jun Lan, Zhixiong Li, Yongle Wu, Xuewei Feng, Longyang Lin, Feichi Zhou, Panpan Zhang, Yida Li   +11 more
doaj   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Modeling and simulation of noise in transistors under large-signal condition [PDF]

, 2011
Bonani, Fabrizio, Riccardo Tisseur, Giovanni Ghione, Ghione, Giovanni, Donati Guerrieri, Simona, Simona Donati Guerrieri, Tisseur, Riccardo, Fabrizio Bonani   +7 more
core   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source