Results 171 to 180 of about 3,944,515 (307)
Experimental Prototyping and Atomistic Modeling of Graphene Quantum Dot-Sensitized Solar Cells. [PDF]
Kaczmarek Ł +4 more
europepmc +1 more source
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
A machine-learning virtual source model for nanoscale transistors. [PDF]
Yang Q, Guo J.
europepmc +1 more source
Correlated Charge Transport in an Organic Coulomb Glass
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler +3 more
wiley +1 more source
Engineering of Optoelectronic Devices for Renewable Energy Applications. [PDF]
Pereira J, Souza R, Moita A.
europepmc +1 more source
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani +10 more
wiley +1 more source
Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]
Roccaforte F.
europepmc +1 more source
Noise source modeling for cyclostationary noise analysis in large-signal device operation [PDF]
Bonani, Fabrizio +2 more
core +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect. [PDF]
Cheng H, Yang Z, Zhang C, Zhang Z.
europepmc +1 more source

