Results 101 to 110 of about 1,982,092 (286)
We report a low-cost arrayed waveguide grating (AWG) based mode-locked semiconductor laser designed for multichannel synchronous ultrashort pulse generation. Both the fabrication process and chip characterization results are discussed in detail.
Songtao Liu +7 more
doaj +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High‐Performance X‐Ray Detection
CsPbBr3–nanodiamonds (NDs) hybrid wafers are developed through a scalable solid‐state grinding and cold‑pressing approach for high‑performance X‑ray detection.
Yanan Gong +11 more
doaj +1 more source
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Applications of semiconductor devices : switches (Electrical and Electronic principles)
This is a presentation about semiconductor devices - switches in the level 4 module Electrical and Electronic Principles and forms part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes ...
University of Wales, Newport, Engineering Department
core
High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin +9 more
wiley +1 more source
Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices
Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...
Zhiming Chen
core +1 more source
Highlights The lanthanide compound of TbCl3 improved the wettability of Me-4PACz and further enhanced crystallization, in which the additional Cl− ions passivate iodine vacancy and improve energy level alignment at buried interface.
Wenming Chai +10 more
doaj +1 more source
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of ...
Youqing Wang +6 more
doaj +1 more source
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source

