Results 151 to 160 of about 1,982,092 (286)
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. [PDF]
Oh H, Dayeh SA.
europepmc +1 more source
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges
As silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical and scaling limits at sub-3-nanometer nodes, critical challenges including the short-channel effect (SCE), surging power consumption, and aggravated ...
Zirui Zhang, Zhiyong Zhang, Nie Zhang
core +1 more source
Metal electrodes transfer using polycarbonate for the fabrication of molybdenum disulfide semiconductor devices. [PDF]
Chiang CH +11 more
europepmc +1 more source
Light irradiation activates the Fe2O3‐BiVO4 heterostructure, enabling efficient solar‐electrochemical coupling in zinc‐air batteries. The built‐in electric field drives directional charge separation, guiding photoelectrons toward oxygen reduction sites and accumulating holes for oxygen evolution, thereby reducing polarization and enhancing discharge ...
Yili Liu +7 more
wiley +1 more source
Editorial for Special Issue "High-Reliability Semiconductor Devices and Integrated Circuits, 3rd Edition". [PDF]
Xu C, Liu Y, Chen Y.
europepmc +1 more source
Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son +2 more
wiley +1 more source
Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]
Wang Z +8 more
europepmc +1 more source
Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography
In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep +4 more
wiley +1 more source

