Results 111 to 120 of about 1,981,708 (286)
Advanced Functional Materials, EarlyView.Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung +17 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Multiphoton Lithography of Organic Semiconductor Devices for 3D Printing of Flexible Electronic Circuits, Biosensors, and Bioelectronics. [PDF]
Adv Mater, 2022 Dadras-Toussi O +5 more
europepmc +1 more source
Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors
Advanced Functional Materials, EarlyView.A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim +3 more
wiley +1 more source
Development of Ag-In Alloy Pastes by Mechanical Alloying for Die Attachment of High-Power Semiconductor Devices. [PDF]
Materials (Basel), 2022 Tsai CH, Huang WC, Kao CR.
europepmc +1 more source
Advanced Functional Materials, EarlyView.HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj +4 more
wiley +1 more source
Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension. [PDF]
J Comput Electron, 2022 Calado P +5 more
europepmc +1 more source
Advanced Functional Materials, EarlyView.Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong +9 more
wiley +1 more source
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation [PDF]
, 2001 Bonani, Fabrizio +3 more
core +1 more source
High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures
Advanced Functional Materials, EarlyView.Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin +9 more
wiley +1 more source