Results 131 to 140 of about 1,982,092 (286)

Delamination of Plasticized Devices in Dynamic Service Environments

With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices.
Wenchao Tian, Guoguang Zhang, Yuanming Chen, Jijun Luo, Xuyang Chen   +4 more
core   +1 more source

Progress in group III nitride semiconductor electronic devices

, 2012
Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the ...
Zhang, Jinfeng, Liu, Xinyu, Hao, Yue, Shen, Bo   +3 more
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Structure‐Guided Balancing of Ambipolar Transport Enables Symmetric Switching in Heterojunction Bilayer Organic Transistor Inverters

Advanced Functional Materials, EarlyView.
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi, Young Yong Kim, Ji Ho Youk, Hoichang Yang   +3 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

, 2009
Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials ...

core  

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

Advanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon, Je‐Jun Lee, Somin Yun, Sangin Hahn, Chanhyeok Kim, Jinsoo Park, Jung Pyo Hong, Seong‐Jun Han, Jung Woo Kim, Jeong Hwan Lee, Subin Jeon, Youngmin Kim, Gunuk Wang, Hanul Min, Do Kyung Hwang   +14 more
wiley   +1 more source

Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene

In the quest to improve overall semiconductor system performance as scaling down continues, reducing resistance in interconnects and bonding interfaces has become a critical focus. This study explores the use of graphene, a highly conductive 2D material,
Tae Yeong Hong, Seul Ki Hong, Jong Kyung Park   +2 more
core   +1 more source

Spectral characterisation of variable reactance devices [PDF]

, 1987
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core  

High UV sensitivity in graphene-silicon Schottky photodiodes in industry standard packaging

npj 2D Materials and Applications
Graphene is of great scientific and commercial interest due to its unique physical properties, including exceptionally high carrier mobility and light transparency over a wide wavelength range.
Ardeshir Esteki, Christoph P. Gebauer, Jülide Avci, Heinrich D. B. Gottlob, Max C. Lemme   +4 more
doaj   +1 more source