Results 121 to 130 of about 2,109,123 (294)

Enhanced Breakdown Voltage in GaN HEMTs Using Step-Graded AlGaN Buffer Layers

open access: yesMicromachines
In this work, step-graded AlGaN buffer layers were introduced into GaN high-electron-mobility transistors to enhance their off-state voltage-blocking capability without intentional deep-level buffer doping.
Junchun Bai   +5 more
doaj   +1 more source

Configuration‐Encoded Cell Alignment by Light‐Gated Silicon Photovoltaic Microcell Arrays

open access: yesAdvanced Functional Materials, EarlyView.
Light‐gated silicon photovoltaic microcells convert pulsed illumination into localized electrical cues. Arranging otherwise similar microcells into four‐lobed, six‐lobed, or circular patterns directs fibroblasts into corresponding local arrangements without wired stimulation.
Yifan Tao   +7 more
wiley   +1 more source

Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications

open access: yesFunctional Diamond
Diamond surfaces terminated with a silicon layer (C–Si) can induce a two-dimensional hole gas (2DHG) layer at the insulator/diamond interface, enabling the realization of p-channel metal–oxide-semiconductor field-effect transistors (MOSFETs). Through two
Yu Fu   +7 more
doaj   +1 more source

High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality

open access: yesPhotonics
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality
Junhong Liu   +11 more
doaj   +1 more source

Preface to Special Issue: Advanced doping methods in semiconductor devices and nanostructures

open access: yes, 2017
Improvements in semiconductor technology and downscaling have required continuous efforts of the scientific community to solve new challenges in the doping of semiconductor materials.
Napolitani, Enrico   +5 more
core   +1 more source

APTES‐Mediated Ti‐Squarate MOF/n‐GaN Nanowire Photoanodes for Efficient Photoelectrochemical Water Splitting

open access: yesAdvanced Functional Materials, EarlyView.
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh   +15 more
wiley   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee   +9 more
wiley   +1 more source

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