Enhanced Breakdown Voltage in GaN HEMTs Using Step-Graded AlGaN Buffer Layers
In this work, step-graded AlGaN buffer layers were introduced into GaN high-electron-mobility transistors to enhance their off-state voltage-blocking capability without intentional deep-level buffer doping.
Junchun Bai +5 more
doaj +1 more source
Configuration‐Encoded Cell Alignment by Light‐Gated Silicon Photovoltaic Microcell Arrays
Light‐gated silicon photovoltaic microcells convert pulsed illumination into localized electrical cues. Arranging otherwise similar microcells into four‐lobed, six‐lobed, or circular patterns directs fibroblasts into corresponding local arrangements without wired stimulation.
Yifan Tao +7 more
wiley +1 more source
Diamond surfaces terminated with a silicon layer (C–Si) can induce a two-dimensional hole gas (2DHG) layer at the insulator/diamond interface, enabling the realization of p-channel metal–oxide-semiconductor field-effect transistors (MOSFETs). Through two
Yu Fu +7 more
doaj +1 more source
High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality
Junhong Liu +11 more
doaj +1 more source
Multiphoton Lithography of Organic Semiconductor Devices for 3D Printing of Flexible Electronic Circuits, Biosensors, and Bioelectronics. [PDF]
Dadras-Toussi O +5 more
europepmc +1 more source
Preface to Special Issue: Advanced doping methods in semiconductor devices and nanostructures
Improvements in semiconductor technology and downscaling have required continuous efforts of the scientific community to solve new challenges in the doping of semiconductor materials.
Napolitani, Enrico +5 more
core +1 more source
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh +15 more
wiley +1 more source
Development of Ag-In Alloy Pastes by Mechanical Alloying for Die Attachment of High-Power Semiconductor Devices. [PDF]
Tsai CH, Huang WC, Kao CR.
europepmc +1 more source
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension. [PDF]
Calado P +5 more
europepmc +1 more source

