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MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

open access: yesAdvanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li   +12 more
wiley   +1 more source

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors. [PDF]

open access: yesACS Nano
Tseng R   +19 more
europepmc   +1 more source

Sub‐Diffraction Nanolithography of Halide Perovskite via Reversible All‐Optical Crystallization–Decomposition

open access: yesAdvanced Materials, EarlyView.
A reversible, all‐optical modulation strategy enables resist‐free, sub‐diffraction nanolithography of halide perovskite films. Leveraging 800 nm fs laser‐induced crystallization and 365 nm laser driven decomposition, reconfigurable patterning achieves feature sizes down to 93.5 nm. This chemistry‐free approach offers dynamic control over optoelectronic
Zhengfen Wan   +4 more
wiley   +1 more source
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