Results 11 to 20 of about 1,982,092 (286)
Gas Sensor Based on ZnO Nanostructured Film for the Detection of Ethanol Vapor
Chemosensors, 2022 In this paper, the ZnO target was synthesized by the solid-state reaction method and a nanostructured thin film was deposited by the RF (radio frequency) magnetron sputtering method on a Multi-Sensor-Platform.
Mikayel Aleksanyan +5 more
doaj +1 more source
Proton irradiation of e2v technologies L3Vision devices [PDF]
, 2005 This paper describes the proton irradiation and subsequent analysis of 8 e2v technologies CCD65 L3Vision devices with the intention of assessing the suitability of L3Vision technology to applications in space.
Holland, AD, Smith, DR
core +6 more sources
Isothermal measurement of current-voltage characteristics of Gunn diodes with reflection of their discontinuities and hysteresis [PDF]
ITM Web of Conferences, 2019 Requirements to the measuring setup are formulated, which make it possible obtaining isothermal current-voltage (I-V) characteristics of the Gunn diode with reflection of their discontinuities, region of negative differential resistance, and hysteresis ...
Semyonov Edward, Malakhovskij Oleg
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
doaj +1 more source
AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
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Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
, 2023 Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications.
Ichiro Omura, Ravi Nath Tripathi
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A Review of Thermal Design for IGBT Module
Zhongguo dianli, 2020 In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU +5 more
doaj +1 more source
Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices
, 2021 Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such ...
Akinobu Teramoto
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Design ICCreatech semiconductor wafer accounting and probe measurement automatization software [PDF]
ITM Web of Conferences, 2019 The different manufacturing processes automatization and creating a modern digital document transferring system is an important problem for enhancing factory performance.
Argunov Dmitry +3 more
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, 2021 The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys.
Zbigniew Lisik +2 more
core +1 more source