Results 71 to 80 of about 1,986,743 (286)

Industrial application of atom probe tomography to semiconductor devices

, 2018
Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as ...
Giddings, A.D., Yeoh, W.K., Shimizu, Yasuo, Alexander Devin Giddings, Yasuo Shimizu, Shimizu, Y., Wilfried Vandervorst, Estivill, R., Yeoh, Wai Kong, Sebastian Koelling, Vandervorst, W., Inoue, K., Giddings, AD Devin, Koji Inoue, Kölling, S Sebastian, Estivill, Robert, Vandervorst, Wilfried, Robert Estivill, Wai Kong Yeoh, Inoue, Koji, Koelling, S.   +20 more
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Scientific Reports, 2017
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang   +8 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Fabrication and characterization of highly responsive hydrogen sensor based on Fe2O3:ZnO nanostructured thin film

Measurement: Sensors
This work aimed to manufacture a highly sensitive hydrogen gas sensor based on Fe2O3:ZnO thin film. The Fe2O3:ZnO based sputtering target was synthesized by a solid-state synthesis method.
Mikayel Aleksanyan, Artak Sayunts, Gevorg Shahkhatuni, Zarine Simonyan, Gohar Shahnazaryan, Vladimir Aroutiounian   +5 more
doaj   +1 more source

Dirac‐Source Linear X‐Ray Detection Diode

Advanced Functional Materials, EarlyView.
Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir, Shoaib Masood, Jialu Li, R. A. W. Ayyubi, Naeimeh Mozaffari, Mosarof Hossain, Nasir Mahmood, Muhammad Nadeem, Jacek J. Jasieniak   +8 more
wiley   +1 more source

Active semiconductor fibers and devices

Unary and compound semiconductors have been deposited into microstructured optical fibers to make junction-based fiber devices, very high power infrared fibers, mid-infrared fiber lasers, and nonlinear hydrogenated amorphous silicon ...
Peacock, A.C., Sparks, J., He, R., Gopalan, V., Healy, N., Mehta, P., Badding, J.V.   +6 more
core   +1 more source

Simulation Study on the Instability of Microscopic Columnar Structures in TiN Coatings Prepared by Magnetron Sputtering

Inorganics
To clarify the instability behavior of the columnar microstructure in RF magnetron sputtered TiN coatings under compressive loading, experimental characterization and finite element simulation were combined to investigate the microstructural features ...
Youqing Wang, Tiantian Yang, Minghui Liu, Xilin Xu, Furong Hou, Renqianzhuoma, Linjuan Yang, Xiangyi Guan, Huixia Liao, Ying Xiang   +9 more
doaj   +1 more source

Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

Nanoscale Research Letters, 2018
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen, Hongxia Liu, Shulong Wang, Wei Li, Xing Wang, Lu Zhao   +5 more
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source