Results 131 to 140 of about 2,109,123 (294)

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

Advanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee, Changwoo Pyo, Seungchan Lee, Juho Son, Yoongi Cho, Jiho Shin, Sungmoon Park, Sungjin Kim, Changmin An, Heein Yoon, Myungsoo Kim   +10 more
wiley   +1 more source

Novel polygon LEDs for higher light extraction

, 2010
The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010), Beijing, China, 16-21 May ...
Wang, XH, Lai, PT, Lam, KY, Choi, HW
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Molecular Bridges for 2D Nanomaterials

Advanced Functional Materials, EarlyView.
Molecular cross‐linking provides a versatile strategy to engineer interfaces in 2D materials. By tuning the linker backbone, binding mode, and interflake spacing, molecular bridges can regulate charge transport, mechanical integrity, chemical functionality, and processing.
Yudhajit Bhattacharjee, Kevin Synnatschke, Andreas Fery, Hendrik Schlicke   +3 more
wiley   +1 more source

Vertically-mounted LEDs for superior light extraction

, 2010
The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010), Beijing, China, 16-21 May ...
Zhu, L, Lai, PT, Choi, HW
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Modulation of Surface‐Associated Transport in (Bi1‐xSbx)2Te3 via Battery‐ Inspired Solid‐State Iontronic Gating

Advanced Functional Materials, EarlyView.
Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva, Reza Asadi, He Ren, Rabiul Islam, Jagadeesh Moodera, Guo‐Xing Miao   +5 more
wiley   +1 more source

Scalable Fabrication of Thermally Reconfigurable Ge Metasurfaces Using Stencil Lithography for Mid‐Infrared Molecular Fingerprinting

Advanced Functional Materials, EarlyView.
Scalable stencil lithography enables resist‐free fabrication of high‐index Ge metasurfaces for mid‐infrared molecular fingerprinting. Reversible thermo‐optic tuning provides post‐fabrication spectral control for precise resonance–vibration mode alignment, enabling enhanced molecular fingerprinting of microplastic particles.
Shovasis Kumar Biswas, Samir Rosas, Wihan Adi, Aidana Beisenova, Vaishakh Unnikrishnan, Furkan Kuruoglu, Filiz Yesilkoy   +6 more
wiley   +1 more source

Digitally Printed Eco‐Friendly Electronic Devices

Advanced Functional Materials, EarlyView.
Fabrication of electronics using eco‐friendly materials through digital printing routes is a promising strategy for improving life cycle sustainability and reducing the environmental impacts of conventional manufacturing. This review highlights state‐of‐the‐art eco‐friendly materials, green ink formulations, various resource‐efficient digital printing ...
Nitheesh M. Nair, Mikel Rincón‐Iglesias, Cristian Mendes‐Felipe, Fatemeh Etehadi, Senentxu Lanceros‐Méndez, Gerardo Hernandez‐Sosa   +5 more
wiley   +1 more source

Complete guide to semiconductor devices

, 1995
A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years.
Ng, Kwok K.
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Thickness‐Programmable Opto‐Memristive Dynamics in 6‐In Wafer‐Scale Atomic‐Layer‐Controlled WS2 for Reservoir Computing

Advanced Functional Materials, EarlyView.
A 6‐in wafer‐scale atomic‐layer‐controlled tungsten disulfide (WS2) is achieved by combining plasma‐assisted synthesis with three‐gas reactive ion etching. Precise layer control enables tunable band‐gap evolution and pulse‐history‐dependent opto‐memristive dynamics.
Seongho Kim, Muyoung Kim, Junhyung Cho, Yeonho Choi, Gunhyoung Kim, Eunseo Go, Sooji Byun, Minchul Roh, Hyunwoo Shim, Jinhyoung Lee, Byeong‐Seon An, Ki Seok Kim, Seungwoo Song, Min Sup Choi, Taesung Kim, Taehyun Park, Hocheon Yoo, Hyeong‐U Kim   +17 more
wiley   +1 more source

Utilising power devices below 100 K to achieve ultra-low power losses [PDF]

One of the main trend in the development of high power electric machines (motors, generators) is to replace the magnetic components with superconducting wires, this inevitably leads to a critical requirement from the industry (Converteam) to operate ...
Leong, Kennith Kin
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