Results 121 to 130 of about 1,986,743 (286)
Progress in group III nitride semiconductor electronic devices
Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the ...
Zhang, Jinfeng +3 more
core +1 more source
Amphoteric Cu‐Doping Leading to High Thermoelectric Performance in p‐Type Bismuth Antimony Telluride
This study shows that Cu plays two opposite roles in p‐type Bi0.5Sb1.5Te3 depending on the processing route. Under thermodynamic‐equilibrium bulk‐synthesis, Cu mainly occupies cation sites, increases hole concentration, preserves mobility, and slightly reduces lattice heat transport. The best‐performing composition among the investigated series reaches
Moritz Thiem +15 more
wiley +1 more source
A removable sacrificial polymer layer engineers the thermal boundary condition during nanosecond laser ablation of PET, suppressing heat‐affected‐zone formation without relying on costly ultrafast lasers. This strategy enables deep, high‐aspect‐ratio trenches with no detectable heat‐affected zone, templating silver‐filled mesh electrodes with record ...
Mehdi Zarei +3 more
wiley +1 more source
Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene
In the quest to improve overall semiconductor system performance as scaling down continues, reducing resistance in interconnects and bonding interfaces has become a critical focus. This study explores the use of graphene, a highly conductive 2D material,
Tae Yeong Hong +2 more
core +1 more source
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices
Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials ...
core
Light irradiation activates the Fe2O3‐BiVO4 heterostructure, enabling efficient solar‐electrochemical coupling in zinc‐air batteries. The built‐in electric field drives directional charge separation, guiding photoelectrons toward oxygen reduction sites and accumulating holes for oxygen evolution, thereby reducing polarization and enhancing discharge ...
Yili Liu +7 more
wiley +1 more source
Spectral characterisation of variable reactance devices [PDF]
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core
Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son +2 more
wiley +1 more source
High UV sensitivity in graphene-silicon Schottky photodiodes in industry standard packaging
Graphene is of great scientific and commercial interest due to its unique physical properties, including exceptionally high carrier mobility and light transparency over a wide wavelength range.
Ardeshir Esteki +4 more
doaj +1 more source

