Results 61 to 70 of about 2,007,997 (147)

Optimization of Self-Heating Driven Leakage Current Properties of Gate-All-Around Field-Effect Transistors Using Neural Network Modeling and Genetic Algorithm

, 2021
As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices.
Ilgu Yun, Chuntaek Park
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Integrated Four-Wavelength DFB Diode Laser Array for Continuous-Wave THz Generation

IEEE Photonics Journal, 2016
We demonstrate a four-wavelength distributed feedback (DFB) diode laser array integrated with a semiconductor optical amplifier (SOA) for widely tunable terahertz (THz) mode-beating generation. The InP-based monolithically integrated chip consists of DFB
Mengdie Sun, Shaoyang Tan, Fei Guo, Songtao Liu, Qiang Kan, Dan Lu, Ruikang Zhang, Wu Zhao, Song Liang, Wei Wang, Ronald Broeke, Francisco. M. Soares, Chen Ji   +12 more
doaj   +1 more source

Active semiconductor fibers and devices

Unary and compound semiconductors have been deposited into microstructured optical fibers to make junction-based fiber devices, very high power infrared fibers, mid-infrared fiber lasers, and nonlinear hydrogenated amorphous silicon ...
Peacock, A.C., Sparks, J., He, R., Gopalan, V., Healy, N., Mehta, P., Badding, J.V.   +6 more
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The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

Nanoscale Research Letters, 2017
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post ...
Xing-Yao Feng, Hong-Xia Liu, Xing Wang, Lu Zhao, Chen-Xi Fei, He-Lei Liu   +5 more
doaj   +1 more source

Delamination of Plasticized Devices in Dynamic Service Environments

With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices.
Wenchao Tian, Guoguang Zhang, Yuanming Chen, Jijun Luo, Xuyang Chen   +4 more
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Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

, 2009
Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials ...

core  

CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High‐Performance X‐Ray Detection

Advanced Electronic Materials
CsPbBr3–nanodiamonds (NDs) hybrid wafers are developed through a scalable solid‐state grinding and cold‑pressing approach for high‑performance X‑ray detection.
Yanan Gong, Zhuangjie Xu, Weidong Zhu, Xiaoxuan Zhang, Zihao Wang, Zeyang Ren, Yanshuang Ba, He Xi, Zhimin Li, Chunfu Zhang, Jincheng Zhang, Yue Hao   +11 more
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Classification and Prediction of Average Current in High-Power Semiconductor Devices: A Machine Learning Framework

The applications of machine learning (ML) in power electronics are expanding with time, providing effective tools that reduce design complexity and enhance predictive accuracy. In high-power semiconductor devices, such as thyristors and high-power diodes,
Luis Vaccaro, Armel Asongu Nkembi, Fawad Ahmad, Federico Portesine, Mario Marchesoni   +4 more
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Buried Interface Regulation with TbCl3 for Highly-Efficient All-Inorganic Perovskite/Silicon Tandem Solar Cells

Nano-Micro Letters
Highlights The lanthanide compound of TbCl3 improved the wettability of Me-4PACz and further enhanced crystallization, in which the additional Cl− ions passivate iodine vacancy and improve energy level alignment at buried interface.
Wenming Chai, Weidong Zhu, He Xi, Dazheng Chen, Hang Dong, Long Zhou, Hailong You, Jincheng Zhang, Chunfu Zhang, Chunxiang Zhu, Yue Hao   +10 more
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Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO₂-Nanotubes@Ti@quartz Structure

Nanomaterials
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of ...
Youqing Wang, Miaomiao Zhang, Wenxuan Wu, Ze Wang, Minghui Liu, Tiantian Yang, Renqianzhuoma   +6 more
doaj   +1 more source