Results 221 to 230 of about 1,981,708 (286)

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

open access: yesAdvanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee   +15 more
wiley   +1 more source

Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene

open access: yesAdvanced Materials, EarlyView.
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang   +11 more
wiley   +1 more source

Electrocatalyst/Semiconductor Interfaces in Photoelectrocatalysts: Mechanistic Analysis of the Impact of Nanoparticle Electrocatalyst Coverage on Performance

open access: yesAdvanced Materials, EarlyView.
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley   +1 more source

Role of Transport Polarity in Transient Electroluminescence of Two-Dimensional TMDC Semiconductors. [PDF]

open access: yesNanomaterials (Basel)
Yang X   +8 more
europepmc   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju   +9 more
wiley   +1 more source

A quantum magneto-photo-thermoelastic model for wave propagation in laser-excited semiconductors. [PDF]

open access: yesSci Rep
Al-Sunousi HF   +5 more
europepmc   +1 more source

Enhancing the strain limit of stretchable organic transistors by Schottky barrier-dominated transport mode. [PDF]

open access: yesNat Commun
Fu Y   +11 more
europepmc   +1 more source

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