Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Synthesis and Application of Acrylonitrile Bridged Thieno[3,2-b]Thiophene Derivative for High Performance Organic Field Effect Transistors and H<sub>2</sub>S Sensor. [PDF]
Cong Z +6 more
europepmc +1 more source
Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang +11 more
wiley +1 more source
Metal organic semiconducting structures for electronic band engineering and optoelectronic uses. [PDF]
Bach LG +3 more
europepmc +1 more source
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley +1 more source
Role of Transport Polarity in Transient Electroluminescence of Two-Dimensional TMDC Semiconductors. [PDF]
Yang X +8 more
europepmc +1 more source
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
wiley +1 more source
A quantum magneto-photo-thermoelastic model for wave propagation in laser-excited semiconductors. [PDF]
Al-Sunousi HF +5 more
europepmc +1 more source
Enhancing the strain limit of stretchable organic transistors by Schottky barrier-dominated transport mode. [PDF]
Fu Y +11 more
europepmc +1 more source
Effects of Ga and Si Incorporation on Oxygen-Related Defects and Bias-Temperature Stability of ZnSnO Thin-Film Transistors. [PDF]
Kim SJ, Park J, Shin W, Lee SY.
europepmc +1 more source

