Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential. [PDF]
Wostatek T +5 more
europepmc +1 more source
Metrology for the next generation of semiconductor devices. [PDF]
Orji NG +9 more
europepmc +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
Erratum: Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Corrigendum]. [PDF]
europepmc +1 more source
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng +11 more
wiley +1 more source
On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene, and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices. [PDF]
Gudjonsdottir S +5 more
europepmc +1 more source
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu +14 more
wiley +1 more source
A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor. [PDF]
Dang Cong T, Hoang T.
europepmc +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.
Dai M +7 more
europepmc +1 more source

