Results 151 to 160 of about 123,224 (272)

Electrically Readable Lateral Flow Assay Using Organic Transistors for Diagnostic Applications

Advanced Materials, EarlyView.
Electrolyte‐gated organic field‐effect transistors (EGOFETs) are integrated with lateral flow (LF) paper fluidics to create a reusable, portable, and low‐cost point‐of‐care (PoC) diagnostic test. The devices are validated for Human Immunoglobulin G detection, achieving high sensitivity (0.1 fm), selectivity, and reproducibility with rapid results in 20–
María Jesús Ortiz‐Aguayo, Carme Martínez‐Domingo, Diego Gutiérrez, Dean Kos, Marta Mas‐Torrent   +4 more
wiley   +1 more source

Realizing giant ferroelectricity in stable wz-Al1 − x B x N alloys by controlling the microstructure and elastic constant

npj Computational Materials
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su, Zhengmao Xiao, Xinhao Chen, Yong Huang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Retraction]. [PDF]

Int J Nanomedicine, 2021
europepmc   +1 more source

Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. [PDF]

Sensors (Basel), 2020
Oh H, Dayeh SA.
europepmc   +1 more source

Atomistic Mechanisms Triggered by Joule Heating Effects in Metallic Cu‐Bi Nanowires for Spintronics

Advanced Materials, EarlyView.
Bi doped metallic Cu nanowires are promising for spintronics thanks to the stabilization of a giant spin Hall effect. However, heat resulting from current injection forces Bi to leave solution, forcing segregation into monoatomic decorations which evolve into coherent crystalline aggregates.
Alejandra Guedeja‐Marrón, Juan Ignacio Beltrán, Matilde Saura‐Múzquiz, Paolo Perna, M. Carmen Muñoz, Lucas Pérez, Maria Varela   +6 more
wiley   +1 more source

Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence

The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities.
Aleksey N. Klochkov, Maksim V. Bulavin, Pavel V. Nekrasov, Bagdaulet Mukhametuly, Elmira Myrzabekova, Nurdaulet Shegebayev, Nikolay I. Kargin, Ruslan Baitugulov, Aru Nurkasova, Aleksey V. Galushko, Askhat Bekbayev, Almas Yskakov, Dana Kulikbayeva, Ivan S. Vasil’evskii, Rassim Nurulin, Aleksander N. Vinichenko   +15 more
core   +1 more source

Azaporphyrinoid‐Based Photo‐ and Electroactive Architectures for Advanced Functional Materials

Advanced Materials, EarlyView.
A long‐standing collaboration between the Torres and Guldi groups has yielded diverse azaporphyrinoid‐based donor‐acceptor nanohybrids with promising applications in solar energy conversion. This conspectus highlights key molecular platforms and structure‐function relationships that govern light and charge management, supporting the rational design of ...
Jorge Labella, Kobra Azizi, Dirk M. Guldi, Tomás Torres   +3 more
wiley   +1 more source

Semiconductor Physics and Semiconductor Devices

The Journal of the Institute of Television Engineers of Japan, 1973
Norikazu Hashimoto, Mikio Ashikawa
  +7 more sources

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

Advanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source