Results 181 to 190 of about 66,661 (251)

Microstructure Semiconductor Materials and Optoelectronic Applications. [PDF]

Nanomaterials (Basel)
Wang Z, Liu X.
europepmc   +1 more source

Phase Engineering of Atomically Precise Nanoclusters (APNCs) of Gold and Beyond

Advanced Materials, EarlyView.
Engineering the structural phase of materials is of paramount importance for both fundamental research and practical applications. In this Review, we summarize the recent progress in controlling the phases of atomically precise nanoclusters (APNCs) of gold, silver and copper, as well as bimetallic systems. The phase‐enabled material properties of APNCs
Yitong Wang, Avirup Sardar, Weijie Ji, Zhongyu Liu, Rongchao Jin   +4 more
wiley   +1 more source

Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors. [PDF]

Nat Commun
Park SH, Jeong MW, Vo NTP, Chang HR, Nguyen TA, Hwang SY, Lee SH, Lee TI, Oh JY.   +8 more
europepmc   +1 more source

Switchable Magnonic Crystals Based on Spin Crossover/CrSBr Heterostructures

Advanced Materials, EarlyView.
Multiscale modeling is employed to investigate the functionality of a light‐controlled, tunable magnonic crystal based on spin‐crossover Fe‐pz molecules integrated with a monolayer of CrSBr. Ab initio simulations confirm that the molecules remain functional on the CrSBr surface, while a semiclassical elastic model demonstrates that light‐induced ...
Andrei Shumilin, Sourav Dey, Denisa Coltuneac, Laurentiu Stoleriu, José J. Baldoví   +4 more
wiley   +1 more source

A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]

Microsyst Nanoeng
Tsiamis A, Stathopoulos S, Prodromakis T.   +2 more
europepmc   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

A Blend Strategy to Achieve High Gain and Long-Term Stability in Complementary Inverters via Vertical Organic Electrochemical Transistors. [PDF]

ACS Appl Mater Interfaces
Luginieski M, Barbosa HFP, Schander A, Faria GC, Lüssem B.   +4 more
europepmc   +1 more source

Trions as Fundamental Species in Chemically Doped Polymer Semiconductors

Advanced Materials, EarlyView.
This work shows that exciton–charge carrier coupling in doped polymer semiconductors gives rise to multi‐particle states, including trions—quasiparticles consisting of two holes and one electron under p‐doping—and bound exciton‐hole pairs, as identified through spectroscopic and theoretical analysis.
Hongmo Li, Henry J. Kantrow, David A. Valverde‐Chávez, Meghan McNeil, Arianna Magni, Mohammad Balooch Qarai, Jude Kpare, Jaden Cramlet, Qiao He, Félix Thouin, Zhihao Feng, Yadong Zhang, Andrew Comstock, Stephen Barlow, Jason Azoulay, Seung Soon Jang, Renaud Demadrille, Martin Heeney, Seth Marder, Nicholas J. Hestand, Alberto Salleo, Frank C. Spano, Carlos Silva‐Acuña, Natalie Stingelin   +23 more
wiley   +1 more source

Two-photon states meet polarization-gradient metasurfaces for nanometric, low-dose lateral-displacement metrology. [PDF]

Light Sci Appl
Deng QM, Zeng JH, Li FJ, Deng ZL.
europepmc   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source