Results 21 to 30 of about 1,986,743 (286)
Semiclassical transport in semiconductor superlattices with boundaries [PDF]
, 2004 In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
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Fast Swept-Wavelength, Low Threshold-Current, Continuous-Wave External Cavity Quantum Cascade Laser
Nanoscale Research Letters, 2018 We present a low threshold-current and fast wavelength-tuning external cavity quantum cascade laser (EC-QCL) using a scanning galvanometer in the Littman-Metcalf cavity geometry.
Xuefeng Jia +9 more
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Electrical Characteristics And Thermal Stability Of Ti Contact To p-Gan. [PDF]
, 2005 Wide band gap GaN semiconductor has a variety of applications in optoelectronic devices such as lightemitting diodes and laser ...
Hudeish, A.Y. +4 more
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Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers
Nanoscale Research Letters, 2017 In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity ...
Chuan-Wei Liu +9 more
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Inorganics, 2022 The FTO/ITO transparent conductive films currently used in photoelectrochemical devices limit performance improvement due to their low conductivity, poor flexibility, and inability to transmit UV light.
Peiling Ren +6 more
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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices
, 2021 Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison.
Hongxia Liu +4 more
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Effect the Technique of Light Trapping on the Performance of Simple Junction n-p Solar Cells Based on GaAs and Si [PDF]
Журнал нано- та електронної фізики, 2017 Light trapping enhances the absorption of active materials in photovoltaic cells. The use of light trapping results in a thinner active region in a solar cell, which lowers the production cost by reducing the amount of material used, and increases the ...
S. Nour, A. Belghachi
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Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
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Nanoscale Research Letters, 2018 In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 μm was fabricated through a standard buried first-order grating and ...
Dong-Bo Wang +10 more
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Engineering Reports, 2022 Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan +3 more
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