Results 21 to 30 of about 2,007,997 (147)

UV–Vis Transparent Conductive Film Based on Cross-Linked Ag Nanowire Network: A Design for Photoelectrochemical Device

open access: yesInorganics, 2022
The FTO/ITO transparent conductive films currently used in photoelectrochemical devices limit performance improvement due to their low conductivity, poor flexibility, and inability to transmit UV light.
Peiling Ren   +6 more
doaj   +1 more source

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings

open access: yesNanoscale Research Letters, 2018
In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 μm was fabricated through a standard buried first-order grating and ...
Dong-Bo Wang   +10 more
doaj   +1 more source

Effect the Technique of Light Trapping on the Performance of Simple Junction n-p Solar Cells Based on GaAs and Si [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
Light trapping enhances the absorption of active materials in photovoltaic cells. The use of light trapping results in a thinner active region in a solar cell, which lowers the production cost by reducing the amount of material used, and increases the ...
S. Nour, A. Belghachi
doaj   +1 more source

The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization

open access: yesEngineering Reports, 2022
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan   +3 more
doaj   +1 more source

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

open access: yes, 2021
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates ...
Zhen-Huang Gu, Chao-Tsung Ma
core   +1 more source

Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing

open access: yes, 2020
The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and ...
Osama Saadeh   +2 more
core   +1 more source

Production and characterisation of nanoparticulate silicon photovoltaic devices [PDF]

open access: yes, 2009
Includes bibliographical references (leaves 104-111).A first approach in fabricating electronically functional nanoparticulate silicon solar cells, by using low cost screen printing on paper substrates, has been developed.
Solana, Oluwole David
core   +1 more source

Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

open access: yesNature Communications
The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Jing Ning   +9 more
doaj   +1 more source

Anomalous Mode Transitions in High Power Distributed Bragg Reflector Quantum Cascade Lasers

open access: yesNanoscale Research Letters, 2019
In this paper, an anomalous spectral data of distributed Bragg reflector (DBR) quantum cascade lasers (QCLs) emitting around 7.6 μm is presented. The two-section DBR lasers, consisting of a gain section and an unpumped Bragg reflector, display an output ...
Feng-Min Cheng   +10 more
doaj   +1 more source

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/Ag Composite Nanonetworks

open access: yesNanomaterials, 2023
The traditional Ag nanowire preparation means that it cannot meet the demanding requirements of photoelectrochemical devices due to the undesirable conductivity, difficulty in compounding, and poor heat resistance.
Menghan Liu   +9 more
doaj   +1 more source

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