Results 101 to 110 of about 1,986,743 (286)
A semi-empirical approach to calibrate simulation models for semiconductor devices. [PDF]
Jaiswal R, Martínez-Ramón M, Busani T.
europepmc +1 more source
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi +3 more
wiley +1 more source
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source
Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices. [PDF]
Kim JH, Kil HJ, Lee S, Park J, Park JW.
europepmc +1 more source
Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon +14 more
wiley +1 more source
Microsphere-assisted, nanospot, non-destructive metrology for semiconductor devices. [PDF]
Kwon S, Park J, Kim K, Cho Y, Lee M.
europepmc +1 more source
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui +5 more
wiley +1 more source
Microspheres give improved resolution in nondestructive examination of semiconductor devices. [PDF]
Woods RC.
europepmc +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality
Junhong Liu +11 more
doaj +1 more source

