Results 101 to 110 of about 66,890 (252)
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality
Junhong Liu +11 more
doaj +1 more source
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito +17 more
wiley +1 more source
Grain boundaries (GBs) in polycrystalline materials often block charge transport and drive degradation. Using Gd‐doped CeO2 as a model electrolyte used in fuel/electrolysis cells, we developed a core‐shell infiltration method to selectively modify GB chemistry and space charge potential, achieving orders‐of‐magnitude ionic conductivity changes.
Z. Sha +5 more
wiley +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle +14 more
wiley +1 more source
In this work, we use direct ink writing (DIW) to 3D print Bi2Te3‐based materials and naturally induce hierarchical functional nanostructures, which reduced the lattice thermal conductivity by half, resulting in high zT of 0.87and 0.89 in p‐type and n‐type compounds, respectively, competitive with commercial materials.
Liangwei Hu +12 more
wiley +1 more source
Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae +17 more
wiley +1 more source
High UV sensitivity in graphene-silicon Schottky photodiodes in industry standard packaging
Graphene is of great scientific and commercial interest due to its unique physical properties, including exceptionally high carrier mobility and light transparency over a wide wavelength range.
Ardeshir Esteki +4 more
doaj +1 more source

