Results 141 to 150 of about 372,122 (281)
Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Retraction]. [PDF]
europepmc +1 more source
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. [PDF]
Oh H, Dayeh SA.
europepmc +1 more source
Bonding large area silicon wafers [PDF]
Diffusion welding of large area silicon wafers without altering electrical properties of semiconductor devices in ...
core +1 more source
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan +10 more
wiley +1 more source
Tracing Sub‐Monolayer Contamination on Wafer‐Scale 2D Materials
Sub‐monolayer adventitious carbon contamination limits the performance and reproducibility of 2D material‐based devices. This study demonstrates scanning helium microscopy (SHeM) as a non‐destructive, ultra‐sensitive tool for wafer‐scale imaging of surface cleanliness.
Chenyang Zhao +7 more
wiley +1 more source
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng +8 more
wiley +1 more source
The history of chemically sensitive semiconductor devices [PDF]
Bergveld, P., Rooij, N.F. de
core +3 more sources
A 2D heterointerface with a two‐site anchor bridge suppresses nonradiative recombination at the perovskite/C₆₀ interface by reducing surface defects, elevating the Fermi level, and strengthening the electric field. This strategy enables efficient electron extraction, delivering 26.32% efficiency, 1.217 V Voc, excellent operational stability, and broad ...
Chaohui Li +27 more
wiley +1 more source
High‐Throughput Exfoliation of Optoelectronic‐Grade MoS2 via Turbulent‐Flow Wet Jet Milling
A scalable wet jet milling exfoliation method is demonstrated for producing optoelectronic‐grade MoS2 nanosheets using environmentally friendly ethyl cellulose in ethanol dispersion media. Guided by fluid dynamics modeling, this approach is optimized to achieve record‐high exfoliation throughput and concentration.
Maryam Khalaj +7 more
wiley +1 more source

