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Switchable Ultralong Chiral Signal Transmission and Gate Tunability in Organic Chiral Semiconductor. [PDF]

open access: yesResearch (Wash D C)
Hu R   +10 more
europepmc   +1 more source
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Semiconductor device simulation

IEEE Transactions on Electron Devices, 1983
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables.
Fichtner, Wolfgang   +2 more
openaire   +1 more source

Semiconductor Device Simulation

IEEE Transactions on Microwave Theory and Techniques, 1974
Two of the numerical methods most widely used in solving the set of partial differential transport equations for holes, electrons, and electric field in semiconductor devices and the various numerical instability phenomena which can be encountered are described in detail.
C.M. Lee, R.J. Lomax, G.I. Haddad
openaire   +1 more source

Semiconductor and Electromagnetic Devices

1983
This short chapter deals with a range of devices used in electronics, describing them briefly and outlining their functions. For various reasons the devices dealt with here are not covered elsewhere in the book, perhaps because they are outside the mainstream of electronics technology, or perhaps because they are components not generally regarded as ...
openaire   +1 more source

Semiconductors and Semiconductor Devices and Circuits

2023
Active and passive semiconductor devices and circuits have revolutionized our way of living. They are key components in applications such as computing, internet, mobile communication, and sensing. This chapter addresses the main characteristics of the underlying semiconductor materials, devices, and (integrated) circuits suitable for analogue microwave
openaire   +2 more sources

Optoelectronic semiconductor devices

1998
An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum.
Leong, Daniel   +3 more
openaire   +5 more sources

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