Results 101 to 110 of about 1,982,092 (286)

Low-Cost AWG-Based Fundamental Frequency Mode-Locked Semiconductor Laser for Multichannel Synchronous Ultrashort Pulse Generation

open access: yesIEEE Photonics Journal, 2016
We report a low-cost arrayed waveguide grating (AWG) based mode-locked semiconductor laser designed for multichannel synchronous ultrashort pulse generation. Both the fabrication process and chip characterization results are discussed in detail.
Songtao Liu   +7 more
doaj   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High‐Performance X‐Ray Detection

open access: yesAdvanced Electronic Materials
CsPbBr3–nanodiamonds (NDs) hybrid wafers are developed through a scalable solid‐state grinding and cold‑pressing approach for high‑performance X‑ray detection.
Yanan Gong   +11 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Applications of semiconductor devices : switches (Electrical and Electronic principles)

open access: yes, 2010
This is a presentation about semiconductor devices - switches in the level 4 module Electrical and Electronic Principles and forms part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes ...
University of Wales, Newport, Engineering Department
core  

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin   +9 more
wiley   +1 more source

Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices

open access: yes
Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...
Zhiming Chen
core   +1 more source

Buried Interface Regulation with TbCl3 for Highly-Efficient All-Inorganic Perovskite/Silicon Tandem Solar Cells

open access: yesNano-Micro Letters
Highlights The lanthanide compound of TbCl3 improved the wettability of Me-4PACz and further enhanced crystallization, in which the additional Cl− ions passivate iodine vacancy and improve energy level alignment at buried interface.
Wenming Chai   +10 more
doaj   +1 more source

Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO2-Nanotubes@Ti@quartz Structure

open access: yesNanomaterials
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of ...
Youqing Wang   +6 more
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

open access: yesAdvanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar   +9 more
wiley   +1 more source

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