Results 71 to 80 of about 1,982,092 (286)

Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing

open access: yes, 2020
The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and ...
Osama Saadeh   +2 more
core   +1 more source

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

open access: yesNanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen   +5 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

open access: yesAdvanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar   +13 more
wiley   +1 more source

Generating structures in the form of GIS with micromechanics elements

open access: yesТехнологія та конструювання в електронній апаратурі, 2004
The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj  

Moisture-Resistant Scalable Ambient-Air Crystallization of Perovskite Films via Self-Buffered Molecular Migration Strategy

open access: yesNano-Micro Letters
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang   +11 more
doaj   +1 more source

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

open access: yesNanoscale Research Letters, 2017
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang   +6 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Epitaxy of advanced nanowire quantum devices

open access: yes, 2017
Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit ...
Joon Sue Lee   +92 more
core   +1 more source

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