Results 31 to 40 of about 2,109,123 (294)

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

Advanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang, Jianxiang Zhao, Zhaoqi Chen, Hao Gong, Yinsen Yan, Junlei Tao, Yong Yang   +6 more
wiley   +1 more source

Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

Nature Communications
The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Jing Ning, Zhichun Yang, Haidi Wu, Xinmeng Dong, Yaning Zhang, Yufei Chen, Xinbo Zhang, Dong Wang, Yue Hao, Jincheng Zhang   +9 more
doaj   +1 more source

Demonstration of High-Power and Stable Single-Mode in a Quantum Cascade Laser Using Buried Sampled Grating

Nanoscale Research Letters, 2019
High-power, low-threshold stable single-mode operation buried distributed feedback quantum cascade laser by incorporating sampled grating emitting at λ ~ 4.87 μm is demonstrated.
Feng-Min Cheng, Jin-Chuan Zhang, Dong-Bo Wang, Zeng-hui Gu, Ning Zhuo, Shen-Qiang Zhai, Li-Jun Wang, Jun-Qi Liu, Shu-Man Liu, Feng-Qi Liu, Zhan-Guo Wang   +10 more
doaj   +1 more source

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/Ag Composite Nanonetworks

Nanomaterials, 2023
The traditional Ag nanowire preparation means that it cannot meet the demanding requirements of photoelectrochemical devices due to the undesirable conductivity, difficulty in compounding, and poor heat resistance.
Menghan Liu, Peiling Ren, Hu Qiao, Miaomiao Zhang, Wenxuan Wu, Baoping Li, Hongjun Wang, Daobin Luo, Jianke Liu, Youqing Wang   +9 more
doaj   +1 more source

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

, 2023
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely.
Yibo Wang, Fan Zhang, Minghu Wu, Zilong Zhou, Yi Liu   +4 more
core   +1 more source

Investigation of Resonance Characteristics of More Than 10 000 Metal‐Coated Silicon MEMS Cantilevers Using Machine Learning

Advanced Engineering Materials, EarlyView.
More than 10 000 metal‐coated silicon MEMS cantilevers are fabricated and characterized to build a large‐scale experimental dataset spanning multiple vibrational modes. Machine learning algorithms are benchmarked to predict resonance frequency and quality factor, with ensemble based models achieving accuracy approaching experimental uncertainty.
Sina Zare Pakzad, Saurabh Thorat, Andre Loch Gesing, Dominik Huber, Christopher Zellner, Patrick Egger, Georg Pfusterschmied, Ulrich Schmid, Michael Schneider   +8 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition

Scientific Reports
(Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated.
Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao   +10 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

Functional Diamond
The control of diamond film growth is crucial for the application of diamond films. In this article, different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process.
Li Junpeng, Ren Zeyang, Zhang Jinfeng, Zhang Jincheng, Su Kai, Meng Jintao, Zhu Liaoliang, Li Yijiang, Chen Junfei, Wang Hanxue, Hao Yue   +10 more
doaj   +1 more source