Results 111 to 120 of about 1,982,092 (286)

A semi-empirical approach to calibrate simulation models for semiconductor devices. [PDF]

Sci Rep, 2023
Jaiswal R, Martínez-Ramón M, Busani T.
europepmc   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices. [PDF]

ACS Omega, 2022
Kim JH, Kil HJ, Lee S, Park J, Park JW.
europepmc   +1 more source

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

Advanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Microsphere-assisted, nanospot, non-destructive metrology for semiconductor devices. [PDF]

Light Sci Appl, 2022
Kwon S, Park J, Kim K, Cho Y, Lee M.
europepmc   +1 more source

Autonomous Multi‐Objective Nanoscale Characterization of Combinatorial (Al, Sc, B)N Films Reveals Composition‐Dependent Ferroelectric Regimes

Advanced Functional Materials, EarlyView.
Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu, Aditya Raghavan, Utkarsh Pratiush, Ian Mercer, Pochun Hsieh, Albert Suceava, Chih‐Yu Lee, Edgar Dimitrov, Mauricio Terrones, Ichiro Takeuchi, Venkatraman Gopalan, Jon‐Paul Maria, Sergei V. Kalinin   +12 more
wiley   +1 more source

Microspheres give improved resolution in nondestructive examination of semiconductor devices. [PDF]

Light Sci Appl, 2022
Woods RC.
europepmc   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality

Photonics
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality
Junhong Liu, Yunfei Xu, Rusong Li, Jinchuan Zhang, Ning Zhuo, Junqi Liu, Lijun Wang, Fengmin Cheng, Shuman Liu, Fengqi Liu, Quanyong Lu, Shenqiang Zhai   +11 more
doaj   +1 more source