Results 31 to 40 of about 66,661 (251)

Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

open access: yesNature Communications
The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Jing Ning   +9 more
doaj   +1 more source

Demonstration of High-Power and Stable Single-Mode in a Quantum Cascade Laser Using Buried Sampled Grating

open access: yesNanoscale Research Letters, 2019
High-power, low-threshold stable single-mode operation buried distributed feedback quantum cascade laser by incorporating sampled grating emitting at λ ~ 4.87 μm is demonstrated.
Feng-Min Cheng   +10 more
doaj   +1 more source

Modular Critical Element Recycling Platform Using a Nanoporous Additively Manufactured Gyroid

open access: yesAdvanced Engineering Materials, EarlyView.
A modular recycling platform integrates 3D‐printed nanoporous gyroid structures to enable efficient critical element recovery. This system utilizes a hierarchical architecture, combining macroscopic channels with polymerization‐induced nanoscale porosity. By systematically tuning structural wall thickness and resin formulation, the platform achieves an
Xiangyu Gao   +6 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition

open access: yesScientific Reports
(Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated.
Yifan Jia   +10 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Designing Efficient Inverted Perovskite Solar Cells with Self-Assembled Monolayer Hole Transport Layers

open access: yesNano-Micro Letters
Highlights This review summarizes the development of self-assembled monolayers (SAMs), with a special focus on their applications in inverted (p-i-n) perovskite solar cells.
Xinyuan Feng   +9 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

Methods for removing defects arising during wet etching of polycrystalline silicon surface

open access: yesТехнологія та конструювання в електронній апаратурі, 2008
A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions ...
A. E. Ivanchykou   +3 more
doaj  

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

open access: yesFunctional Diamond
The control of diamond film growth is crucial for the application of diamond films. In this article, different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process.
Li Junpeng   +10 more
doaj   +1 more source

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