Results 61 to 70 of about 66,890 (252)

Generating structures in the form of GIS with micromechanics elements

open access: yesТехнологія та конструювання в електронній апаратурі, 2004
The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj  

Moisture-Resistant Scalable Ambient-Air Crystallization of Perovskite Films via Self-Buffered Molecular Migration Strategy

open access: yesNano-Micro Letters
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang   +11 more
doaj   +1 more source

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

open access: yesNanoscale Research Letters, 2017
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang   +6 more
doaj   +1 more source

Room‐Temperature Synthesis of Strongly Confined Lead Halide Perovskite Quantum Dots

open access: yesAdvanced Functional Materials, EarlyView.
CsPbX3${\rm CsPbX}_3$ lead halide perovskite quantum dots (QDs) are synthesized in a room‐temperature, five‐minute synthesis, yielding size‐controlled QDs with bright, tunable emission governed by reaction conditions and halide composition. A strongly binding ligand, OD‐PEA, ensures months‐long stability under ambient conditions and facilitates their ...
Anna Abfalterer   +13 more
wiley   +1 more source

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

open access: yesScientific Reports, 2017
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium
Guijuan Zhao   +8 more
doaj   +1 more source

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

open access: yesAdvanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar   +13 more
wiley   +1 more source

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

open access: yesAdvanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal   +8 more
wiley   +1 more source

Fabrication and characterization of highly responsive hydrogen sensor based on Fe2O3:ZnO nanostructured thin film

open access: yesMeasurement: Sensors
This work aimed to manufacture a highly sensitive hydrogen gas sensor based on Fe2O3:ZnO thin film. The Fe2O3:ZnO based sputtering target was synthesized by a solid-state synthesis method.
Mikayel Aleksanyan   +5 more
doaj   +1 more source

Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

open access: yesNanoscale Research Letters, 2018
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen   +5 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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