Results 111 to 120 of about 2,109,123 (294)

Quantum effects and nanofabrications in scaling metal-oxide-semiconductor devices

, 2006
Handbook of Semiconductor Nanostructures and Nanodevices is the World's first multivolume handbook covering a wide variety of advanced and emerging developments in the field of semiconductor nanotechnology. Semiconductor materials are the key elements of
Fu, Y., Xu, Q.-X., Willander, Magnus,
core  

Multidimensional‐Encoded High‐Fidelity Spectrometers With a Floating‐Base Bipolar Junction

Advanced Functional Materials, EarlyView.
A floating‐base bipolar junction photodetector enables multidimensional spectral encoding through synergistic gate‐ and drain‐bias modulation of interfacial barrier matching. The resulting complementary spectral responses form a diverse, weakly correlated response matrix, enabling robust and high‐fidelity spectral reconstruction even at sub‐nanoampere ...
Sang‐Hyeon Lee, Junho Min, Yonas Tsegaye Megra, Min‐Hye Jeong, Hwi Je Woo, Jaewon Han, Junheon Ha, Gyunghyun Jang, Young Jae Song, Hyun‐Soo Ra, Hoon Hahn Yoon, Jong‐Soo Lee   +11 more
wiley   +1 more source

Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices. [PDF]

ACS Omega, 2022
Kim JH, Kil HJ, Lee S, Park J, Park JW.
europepmc   +1 more source

Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene

In the quest to improve overall semiconductor system performance as scaling down continues, reducing resistance in interconnects and bonding interfaces has become a critical focus. This study explores the use of graphene, a highly conductive 2D material,
Tae Yeong Hong, Seul Ki Hong, Jong Kyung Park   +2 more
core   +1 more source

Insulating‐Passivating Interfaces for Narrow‐Bandgap Tin‐Lead Perovskites Enable High‐Photovoltage in Single‐ and Double‐Junction Solar Cells

Advanced Functional Materials, EarlyView.
Combining field‐effect surface passivation of a narrow‐bandgap tin–lead perovskite by diammonium ions with introducing oleyl‐based amphiphiles to create insulating interface layers between the absorber and the adjacent hole and electron transporting layers increases the open‐circuit voltage to 91.5% of the detailed‐balance limit and enhances the power ...
Vishnu Vijayakumar, Christ H. L. Weijtens, Laura Bellini, Nick R. M. Schipper, Isabella Taupitz, Maxim Simmonds, Johannes C. Lambooij, Anuja Vijayan, Lana M. Kessels, Simon V. Quiroz Monnens, Guus J. W. Aalbers, Willemijn H. M. Remmerswaal, Stefan C. J. Meskers, Shuaifeng Hu, Junke Wang, Martijn M. Wienk, Henry J. Snaith, Steve Albrecht, René A. J. Janssen   +18 more
wiley   +1 more source

Microsphere-assisted, nanospot, non-destructive metrology for semiconductor devices. [PDF]

Light Sci Appl, 2022
Kwon S, Park J, Kim K, Cho Y, Lee M.
europepmc   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Microspheres give improved resolution in nondestructive examination of semiconductor devices. [PDF]

Light Sci Appl, 2022
Woods RC.
europepmc   +1 more source

Semiconductor Laser Engineering, Reliability and Diagnostics A Practical Approach to High Power and Single Mode Devices

, 2013
Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference
Epperlein, Peter W.
core  

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source