Results 41 to 50 of about 2,007,997 (147)

Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D [PDF]

Журнал нано- та електронної фізики, 2014
The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge).
Benmoussa Dennai, H. Ben Slimane, A. Helmaoui   +2 more
doaj  

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

IEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Hepeng Zhang, Shengrui Xu, Zhihong Liu, Hong Zhou, Yue Hao   +8 more
doaj   +1 more source

Failure mechanisms in compound semiconductor electron devices

, 2001
In this chapter, we review the main failure mechanisms that affect advanced compound semiconductor electron devices such as high electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBTs)
L. CATTANI, FANTINI, Fausto, M. Borgarino, R. MENOZZI, D. DIECI, F. Fantini, BORGARINO, Mattia   +6 more
core   +1 more source

Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

, 2022
As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies.
Nasiri, Aryanaz Faghih, Mohammadreza Kolahdouz, Buqing Xu, Kolahdouz, Mohammadreza,, Wu, Yuanyuan, Radamson, Henry H., Manian, Mahmoud,, Aghababa, Hossein, Mahmoud Manian, Nasiri, Aryanaz Faghih,, Hossein Aghababa, Yuanyuan Wu, Aryanaz Faghih Nasiri, Aghababa, Hossein,, Wu, Yuanyuan,, Xu, Buqing, Radamson, Henry H.,, Xu, Buqing,, Manian, Mahmoud, Kolahdouz, Mohammadreza, Fathollahzadeh, Maryam,, Fathollahzadeh, Maryam, Maryam Fathollahzadeh, Henry H. Radamson   +23 more
core   +1 more source

Semiclassical transport in semiconductor superlattices with boundaries [PDF]

, 2004
In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
core   +1 more source

Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices

Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...
Zhiming Chen
core   +1 more source

Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]

, 2016
This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core   +1 more source

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

, 2022
A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared ...
Xiang Ding, Shifan Gao, Yi Zhao, Na Wei, Wenhao Wu   +4 more
core   +1 more source

Generating structures in the form of GIS with micromechanics elements

Технологія та конструювання в електронній апаратурі, 2004
The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj  

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Nanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong   +5 more
doaj   +1 more source