Results 11 to 20 of about 123,224 (272)

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues

, 2023
Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications.
Ichiro Omura, Ravi Nath Tripathi
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Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices

, 2021
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such ...
Akinobu Teramoto
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Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

, 2021
The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys.
Zbigniew Lisik, Jacek Podgorski, Janusz Wozny   +2 more
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Transient electrothermal simulation of power semiconductor devices [PDF]

, 2010
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T., Mantooth, HA, Hudgins, Jerry L., Du, Bin, Du, B, Palmer, PR, Mantooth, H. Alan, ,, Palmer, Patrick R., Santi, Enrico, Hudgins, JL, Santi, E, Bryant, AT   +12 more
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Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

, 2021
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates ...
Zhen-Huang Gu, Chao-Tsung Ma
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Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models [PDF]

, 1997
The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models.
Bonani, S., FILICORI F, Filicori, F., Pirola, M., Ghione, Giovanni, Donati Guerrieri, Simona, Ghione, G., Pirola, Marco, Bonani, F., Guerrieri, S.D., BONANI, Fabrizio   +10 more
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Ballistic superconductivity in semiconductor nanowires [PDF]

, 2017
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems ...
Önder Gül, Kenji Watanabe, Maja C. Cassidy, Plissard, S.R. (author), van Veen, Jasper, Cassidy, M.C. (author), van Veen, J. (author), Wimmer, M., Zhang, H. (author), Jasper van Veen, Zhang, H., Marina Quintero-Pérez, Kouwenhoven, Leo P, Leo P. Kouwenhoven, Taniguchi, Takashi (author), de Vries, F.K., Erik P.A.M. Bakkers, Vries, Folkert K de, Michał P. Nowak, Bommer, J.D.S. (author), Bommer, J.D.S., Sébastien R Plissard, Zhang, Hao, Nowak, M.P., van Woerkom, D.J. (author), Koelling, Sebastian, Vincent Mourik, van Veen, J., Takashi Taniguchi, Taniguchi, T., Koelling, S., Moor, M.W.A. de, Mourik, Vincent (author), Kun Zuo, van Woerkom, D.J., Bommer, Jouri D.S., Vries, F.K. de, Conesa-Boj, S., Sebastian Koelling, Quintero Pérez, M., Conesa Boj, S Sonia, Conesa Boj, S., Michiel W. A. de Moor, Goswami, Srijit, Srijit Goswami, Mourik, Vincent, Michael Wimmer, Gül, Ö., Nowak, Michał P, Gül, Önder Tolga, Conesa Boj, S. (author), Wimmer, Michael, Cassidy, Maja C., Car, Diana, Kouwenhoven, Leo P., Zuo, Kun, Koelling, Sebastian (author), Gül, Önder (author), Plissard, SR Sebastien, Bakkers, Erik P.A.M., Car, D Diana, Jouri D. S. Bommer, Folkert K. de Vries, Hao Zhang, Cassidy, M.C., Bakkers, Erik P.A.M.; id_orcid, Bommer, Jouri DS, Gül, Önder, Kölling, S Sebastian, Mourik, V., Nowak, M.P. (author), Wimmer, M.T. (author), Plissard, S.R., Van Woerkom, David J, de Moor, M.W.A. (author), van Woerkom, David J., Kouwenhoven, Leo P. (author), Car, Diana (author), de Vries, F.K. (author), de Vries, Folkert K., Car, D., Quintero-Pérez, Marina, Watanabe, Kenji, Cassidy, M C, Watanabe, Kenji (author), Taniguchi, Takashi, Diana Car, Plissard, Sébastien R., Goswami, S. (author), Goswami, S., Kouwenhoven, L.P., de Moor, M.W.A., Moor, MWA de, Wimmer, M, Bakkers, E.P.A.M., Quintero Perez, M. (author), Watanabe, K., Bakkers, E.P.A.M. (author), Veen, Jasper van, Zuo, K., Wimmer, M.T., Nowak, Michał P., David J. van Woerkom, Bakkers, EPAM Erik, Veen, J. van, Zuo, K. (author), de Moor, Michiel W.A., Sonia Conesa-Boj, Woerkom, D.J. van, Quintero-Pérez, M   +109 more
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Optical management in organic photovoltaic devices

Carbon Energy, 2021
Due to their potentials in light‐weight, flexible, and semitransparent devices, organic photovoltaics are of great significance in the field of renewable energy.
Cheng Yang, Chao Zhao, Yang Sun, Qicong Li, Md. Rasidul Islam, Kong Liu, Zhijie Wang, Shengchun Qu, Zhanguo Wang   +8 more
doaj   +1 more source

Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]

, 2016
This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

, 2021
Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison.
Hongxia Liu, Dong Wang, Rundi Qiao, Guodu Han, Yanning Chen   +4 more
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