Results 231 to 240 of about 372,122 (281)

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms. [PDF]

Micromachines (Basel)
Bernstein JB, Avraham T, Wang B.
europepmc   +1 more source

A First-Principles Study of Monolayer B₄Cl₄: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]

ACS Omega
Li Z, Zhang Z, Liang S, Wang X, Han J.
europepmc   +1 more source

A step-up DC-DC converter with high voltage gain and soft switched capability and minimum phase characteristic. [PDF]

Sci Rep
Salehi SM, Varjani AY.
europepmc   +1 more source

Low-Power Electrochromic Displays Based on Electrocatalytic Counter Electrodes and PVDF-HFP Gel Polymer Electrolyte. [PDF]

Materials (Basel)
Wu L, Liu L, Li F, Li Q, Wu L.
europepmc   +1 more source

Tuning the Optoelectronic and Photovoltaic Properties of Natural Chlorophyll Dye Molecules via Solvent Interaction: A Computational Insight. [PDF]

Nanomaterials (Basel)
Al-Seady MA, Abed HH, Abduljalil HM, Kahaly MU.   +3 more
europepmc   +1 more source

Semiconductor Devices

The Journal of the Institute of Television Engineers of Japan, 1976
openaire   +2 more sources

Photopatterning of organic mixed ionic electronic conductors for monolithic complementary inverter. [PDF]

iScience
Xie X, Zhang L, Ma M, Ye G, Zhang J, Chen X, You M, Liu J.   +7 more
europepmc   +1 more source

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Semiconductor devices. Flexible and stretchable semiconductor devices

2019
  +13 more sources

Semiconductor device simulation

IEEE Transactions on Electron Devices, 1983
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables.
Fichtner, Wolfgang, Rose, Donald J., Bank, Randolph E.   +2 more
openaire   +1 more source

Semiconductor Device Simulation

IEEE Transactions on Microwave Theory and Techniques, 1974
Two of the numerical methods most widely used in solving the set of partial differential transport equations for holes, electrons, and electric field in semiconductor devices and the various numerical instability phenomena which can be encountered are described in detail.
C.M. Lee, R.J. Lomax, G.I. Haddad
openaire   +1 more source