Results 41 to 50 of about 66,661 (251)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

3 W Continuous-Wave Room Temperature Quantum Cascade Laser Grown by Metal-Organic Chemical Vapor Deposition

open access: yesPhotonics, 2023
In this article, we report a high-performance λ ~ 4.6 μm quantum cascade laser grown by metal-organic chemical vapor deposition. Continuous wave power of 3 W was obtained from an 8 mm-long and 7.5 μm wide coated laser at 285 K.
Teng Fei   +12 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

A Transistor Voltage Divider for Low-Power Autonomous Electronic Systems

open access: yesEng
In this study, the operation features of a transformerless voltage divider, with transistor–diode commutation of switchable capacitors, designed to operate as a part of low-power autonomous electronic systems with reduced output voltage are studied both ...
Valery P. Dragunov   +4 more
doaj   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

open access: yesAdvanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón   +8 more
wiley   +1 more source

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

open access: yesScientific Reports, 2017
Effect of charge carrier confinement and ultra-low disorder acquainted in AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence spectroscopy.
S. Haldar   +6 more
doaj   +1 more source

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

open access: yesIEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang   +8 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian   +1 more
wiley   +1 more source

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